Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications

Fuente: arXiv
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Main Authors: Garattini, M., Annucci, D., Gianotti, P., Liedl, A., Long, E., Mancini, M., Napolitano, T., Raggi, M., Valente, P.
Format: Preprint
Published: 2024
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author Garattini, M.
Annucci, D.
Gianotti, P.
Liedl, A.
Long, E.
Mancini, M.
Napolitano, T.
Raggi, M.
Valente, P.
author_facet Garattini, M.
Annucci, D.
Gianotti, P.
Liedl, A.
Long, E.
Mancini, M.
Napolitano, T.
Raggi, M.
Valente, P.
contents For the first time at the Beam Test Facility of the DAΦNE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DAΦNE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.
format Preprint
id arxiv_https___arxiv_org_abs_2409_13526
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications
Garattini, M.
Annucci, D.
Gianotti, P.
Liedl, A.
Long, E.
Mancini, M.
Napolitano, T.
Raggi, M.
Valente, P.
Accelerator Physics
For the first time at the Beam Test Facility of the DAΦNE accelerator complex at the Laboratori Nazionali di Frascati of INFN, 450 MeV positrons have been deflected with high efficiency, using the Planar Channeling process in a bent silicon crystal. The deflection angle obtained is beyond 1 mrad. This interesting result finds several applications for manipulation of this kind of beams, in particular for slow extraction from leptons circular accelerators like DAΦNE. In this work the experimental apparatus, the measurement procedure and the experimental results are reported.
title Steering of Sub-GeV positrons by ultra-thin bent Silicon crystal for ultra slow extraction applications
topic Accelerator Physics
url https://arxiv.org/abs/2409.13526