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Main Authors: Wu, Huiliang, Wang, Jianbo, Zhao, Chenbo, Zhan, Qingfeng, Xue, Jiangtao, Zhang, Senfu, Wei, Jinwu, Wang, Xiangqian, Liu, Qingfang
Format: Preprint
Published: 2024
Subjects:
Online Access:https://arxiv.org/abs/2409.14772
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author Wu, Huiliang
Wang, Jianbo
Zhao, Chenbo
Zhan, Qingfeng
Xue, Jiangtao
Zhang, Senfu
Wei, Jinwu
Wang, Xiangqian
Liu, Qingfang
author_facet Wu, Huiliang
Wang, Jianbo
Zhao, Chenbo
Zhan, Qingfeng
Xue, Jiangtao
Zhang, Senfu
Wei, Jinwu
Wang, Xiangqian
Liu, Qingfang
contents The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span about tens of thousands Oersted which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6*10^4 Oe to lower than 2*10^3 Oe at room temperature. Meanwhile, nonvolatile switchings between pure magnetic phases of FeRh at room temperature also can be realized by applying voltage pulses. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.
format Preprint
id arxiv_https___arxiv_org_abs_2409_14772
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Domino-like magnetic phase transition induced by a bias voltage in FeRh thin film
Wu, Huiliang
Wang, Jianbo
Zhao, Chenbo
Zhan, Qingfeng
Xue, Jiangtao
Zhang, Senfu
Wei, Jinwu
Wang, Xiangqian
Liu, Qingfang
Materials Science
The first-order magnetic phase transition (MPT) usually happens with a very wide magnetic field span about tens of thousands Oersted which hinders its applications. In this work, we induce a domino-like MPT via introducing a bias voltage in FeRh thin film and thus realize a large narrowing of transition magnetic field span from 6*10^4 Oe to lower than 2*10^3 Oe at room temperature. Meanwhile, nonvolatile switchings between pure magnetic phases of FeRh at room temperature also can be realized by applying voltage pulses. The critical condition and phase diagram for domino-like MPTs are obtained in theory and our experiments support it well. Our works not only benefit the studies and applications of MPT-based devices but also are significant in the applications of the phase transition systems with resistance change.
title Domino-like magnetic phase transition induced by a bias voltage in FeRh thin film
topic Materials Science
url https://arxiv.org/abs/2409.14772