Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866916406790979584 |
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| author | Wu, Shuhao Li, Xinzhu Gallagher, Ian Lawrie, Benjamin Wang, Hailin |
| author_facet | Wu, Shuhao Li, Xinzhu Gallagher, Ian Lawrie, Benjamin Wang, Hailin |
| contents | We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_14856 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures Wu, Shuhao Li, Xinzhu Gallagher, Ian Lawrie, Benjamin Wang, Hailin Quantum Physics Mesoscale and Nanoscale Physics We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states. |
| title | Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures |
| topic | Quantum Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.14856 |