TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Acceso en línea: | |
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| _version_ | 1866915705183535104 |
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| author | Xiao, Zhentao Zheng, Yihao Zhang, Zonghao Shi, Jinhong Wang, Chenxing Jiang, Yunteng Huang, Haimeng Islam, Aynul Yang, Hongqiang |
| author_facet | Xiao, Zhentao Zheng, Yihao Zhang, Zonghao Shi, Jinhong Wang, Chenxing Jiang, Yunteng Huang, Haimeng Islam, Aynul Yang, Hongqiang |
| contents | This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mitigate drain induced barrier lowering (DIBL) effect. Silvaco TCAD software is used for process (Athena) and device (Atlas) simulations. For the further development of MOSFET technology, we implemented our device (planar 28 nm n-MOSFET) with high-k metal-gate (HK/MG), lightly doped drain (LDD), multiple spacers (mult-spacers), and silicide. Simulation validation shows improvements over other 28 nm devices, with lower static power consumption and notable optimizations in both S.S. (69.8 mV/dec) and DIBL effect (30.5 mV/V). |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_15015 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization Xiao, Zhentao Zheng, Yihao Zhang, Zonghao Shi, Jinhong Wang, Chenxing Jiang, Yunteng Huang, Haimeng Islam, Aynul Yang, Hongqiang Applied Physics This study optimizes 28 nm planar MOSFET technology to reduce device leakage current and enhance switching speed. The specific aims are to decrease subthreshold swing (S.S.) and mitigate drain induced barrier lowering (DIBL) effect. Silvaco TCAD software is used for process (Athena) and device (Atlas) simulations. For the further development of MOSFET technology, we implemented our device (planar 28 nm n-MOSFET) with high-k metal-gate (HK/MG), lightly doped drain (LDD), multiple spacers (mult-spacers), and silicide. Simulation validation shows improvements over other 28 nm devices, with lower static power consumption and notable optimizations in both S.S. (69.8 mV/dec) and DIBL effect (30.5 mV/V). |
| title | TCAD Simulation of Novel Multi-Spacer HK/MG 28nm Planar MOSFET for Sub-threshold Swing and DIBL Optimization |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.15015 |