NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Fuente: arXiv

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Bibliographic Details
Main Authors:	Liu, Yizheng, Roy, Saurav, Peterson, Carl, Bhattacharyya, Arkka, Krishnamoorthy, Sriram
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2409.17374