NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
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| Format: | Preprint |
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2024
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| _version_ | 1866929516025217024 |
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| author | Liu, Yizheng Roy, Saurav Peterson, Carl Bhattacharyya, Arkka Krishnamoorthy, Sriram |
| author_facet | Liu, Yizheng Roy, Saurav Peterson, Carl Bhattacharyya, Arkka Krishnamoorthy, Sriram |
| contents | This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, record-low reverse current leakage under high reverse bias, and high junction electric fields (>3.34 MV/cm). The heterojunction diodes are fabricated via bilayer NiOx sputtering followed by self-aligned mesa-etching for field-termination on both large (1-mm2) and small area (100-μm diameter) devices. The HJD exhibits a ~135 A/cm2 forward current density at 5 V with a rectifying ratio of ~1010. The minimum differential specific on-resistance is measured to be 17.26 mΩ cm2. The breakdown voltage on 100-μm diameter pads was measured to be greater than 3 kV with a noise floor-level reverse leakage current density (10-8~10-6 A/cm2) until 3 kV, accomplishing a parallel-plane junction electric field to be at least 3.34 MV/cm at 3 kV with a power figure of merit (PFOM) >0.52 GW/cm2. Temperature-dependent forward current density-voltage (J-V) measurements are performed from room temperature (25 C) to 200 C which showed a temperature coefficient of resistance (α) equaling 1.56, higher than that of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs), indicating potential conductivity degradation within NiOx at elevated temperatures. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2409_17374 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination Liu, Yizheng Roy, Saurav Peterson, Carl Bhattacharyya, Arkka Krishnamoorthy, Sriram Applied Physics This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactive RF magnetron sputtering and lift-off processing with >3 kV breakdown voltage, record-low reverse current leakage under high reverse bias, and high junction electric fields (>3.34 MV/cm). The heterojunction diodes are fabricated via bilayer NiOx sputtering followed by self-aligned mesa-etching for field-termination on both large (1-mm2) and small area (100-μm diameter) devices. The HJD exhibits a ~135 A/cm2 forward current density at 5 V with a rectifying ratio of ~1010. The minimum differential specific on-resistance is measured to be 17.26 mΩ cm2. The breakdown voltage on 100-μm diameter pads was measured to be greater than 3 kV with a noise floor-level reverse leakage current density (10-8~10-6 A/cm2) until 3 kV, accomplishing a parallel-plane junction electric field to be at least 3.34 MV/cm at 3 kV with a power figure of merit (PFOM) >0.52 GW/cm2. Temperature-dependent forward current density-voltage (J-V) measurements are performed from room temperature (25 C) to 200 C which showed a temperature coefficient of resistance (α) equaling 1.56, higher than that of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs), indicating potential conductivity degradation within NiOx at elevated temperatures. |
| title | NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2409.17374 |