Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2409.17444 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866918021781520384 |
|---|---|
| author | de Almeida, G. G. de Andrade, A. M. H. Tumelero, M. A. |
| author_facet | de Almeida, G. G. de Andrade, A. M. H. Tumelero, M. A. |
| contents | The Bi1-xSbx was the first 3D topological insulator found in nature. It presents a complex electronic structure with topological to trivial transition and a semimetallic to semiconductor transition, both achieved by changing the x fraction of Sb. The complex nature of this system may lead to several electronic and topological phases in matter, making it a promising quantum material. Here, we focused on preparing very high-quality thin films samples of Bi1-xSbx with varying fraction of x using the Co-deposition Magnetron Sputtering technique. Our results demonstrate that high-quality samples, with compact and uniform morphology, presenting a preferential direction of growth, can be obtained over SiO2 substrate. Our findings suggest a dependence between the thin films crystalline texture and the composition of the samples, as well as the deposition temperature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_17444 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Preparation and Characterization of High Quality Bi1-xSbx Thin Films: A Sputtering Deposition Approach de Almeida, G. G. de Andrade, A. M. H. Tumelero, M. A. Materials Science The Bi1-xSbx was the first 3D topological insulator found in nature. It presents a complex electronic structure with topological to trivial transition and a semimetallic to semiconductor transition, both achieved by changing the x fraction of Sb. The complex nature of this system may lead to several electronic and topological phases in matter, making it a promising quantum material. Here, we focused on preparing very high-quality thin films samples of Bi1-xSbx with varying fraction of x using the Co-deposition Magnetron Sputtering technique. Our results demonstrate that high-quality samples, with compact and uniform morphology, presenting a preferential direction of growth, can be obtained over SiO2 substrate. Our findings suggest a dependence between the thin films crystalline texture and the composition of the samples, as well as the deposition temperature. |
| title | Preparation and Characterization of High Quality Bi1-xSbx Thin Films: A Sputtering Deposition Approach |
| topic | Materials Science |
| url | https://arxiv.org/abs/2409.17444 |