Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure
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arXiv
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| Format: | Preprint |
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2024
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| author | Ding, Yifan Hu, Chenyazhi Li, Wenhui Chen, Lan He, Jiadian Zhang, Yiwen Zeng, Xiaohui Wang, Yanjiang Dong, Peng Wang, Jinghui Zhou, Xiang Wu, Yueshen Chen, Yulin Li, Jun |
| author_facet | Ding, Yifan Hu, Chenyazhi Li, Wenhui Chen, Lan He, Jiadian Zhang, Yiwen Zeng, Xiaohui Wang, Yanjiang Dong, Peng Wang, Jinghui Zhou, Xiang Wu, Yueshen Chen, Yulin Li, Jun |
| contents | The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe$_2$ under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_17586 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure Ding, Yifan Hu, Chenyazhi Li, Wenhui Chen, Lan He, Jiadian Zhang, Yiwen Zeng, Xiaohui Wang, Yanjiang Dong, Peng Wang, Jinghui Zhou, Xiang Wu, Yueshen Chen, Yulin Li, Jun Superconductivity Applied Physics The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe$_2$ under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits. |
| title | Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure |
| topic | Superconductivity Applied Physics |
| url | https://arxiv.org/abs/2409.17586 |