VVTEAM: A Compact Behavioral Model for Volatile Memristors
Fuente:
arXiv
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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866918097824251904 |
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| author | Patni, Tanay Daniels, Rishona Kvatinsky, Shahar |
| author_facet | Patni, Tanay Daniels, Rishona Kvatinsky, Shahar |
| contents | Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_17723 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | VVTEAM: A Compact Behavioral Model for Volatile Memristors Patni, Tanay Daniels, Rishona Kvatinsky, Shahar Hardware Architecture Emerging Technologies Neural and Evolutionary Computing Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and area. Additionally, volatile memristors are useful as selector devices and for hardware security circuits such as physical unclonable functions. To facilitate the design and simulation of circuits, a compact behavioral model is essential. This paper proposes V-VTEAM, a compact, simple, general, and flexible behavioral model for volatile memristors, inspired by the VTEAM nonvolatile memristor model and developed in MATLAB. The validity of the model is demonstrated by fitting it to an ion drift/diffusion-based Ag/SiOx/C/W volatile memristor, achieving a relative root mean error square of 4.5%. |
| title | VVTEAM: A Compact Behavioral Model for Volatile Memristors |
| topic | Hardware Architecture Emerging Technologies Neural and Evolutionary Computing |
| url | https://arxiv.org/abs/2409.17723 |