Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866913521292279808 |
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| author | Hoang, Lauren Khan, Asir Intisar Bennett, Robert K. A. Kim, Hyun-mi Zhang, Zhepeng Hocking, Marisa Choi, Ae Rim Oh, Il-Kwon Mannix, Andrew J. Pop, Eric |
| author_facet | Hoang, Lauren Khan, Asir Intisar Bennett, Robert K. A. Kim, Hyun-mi Zhang, Zhepeng Hocking, Marisa Choi, Ae Rim Oh, Il-Kwon Mannix, Andrew J. Pop, Eric |
| contents | Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-gap states with conventional metal contacts. Here, we report topological semimetal NbP as p-type electrical contacts to bilayer WS2 with up to 5.8 microamperes per micron hole current at room temperature; this is the highest to date for sub 2 nm thin WS2 and more than 50 times larger than with metals like Ni or Pd. The p-type conduction is enabled by the simultaneously high work function and low density of states of the NbP, which reduce Fermi level pinning. These contacts are sputter-deposited at room temperature, an approach compatible with CMOS fabrication, a step towards enabling ultrathin WS2 semiconductors in future nanoelectronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2409_18926 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts Hoang, Lauren Khan, Asir Intisar Bennett, Robert K. A. Kim, Hyun-mi Zhang, Zhepeng Hocking, Marisa Choi, Ae Rim Oh, Il-Kwon Mannix, Andrew J. Pop, Eric Materials Science Mesoscale and Nanoscale Physics Two-dimensional (2D) semiconductors are promising for low-power complementary metal oxide semiconductor (CMOS) electronics, which require ultrathin n- and p-type transistor channels. Among 2D semiconductors, WS2 is expected to have good conduction for both electrons and holes, but p-type WS2 transistors have been difficult to realize due to the relatively deep valence band and the presence of mid-gap states with conventional metal contacts. Here, we report topological semimetal NbP as p-type electrical contacts to bilayer WS2 with up to 5.8 microamperes per micron hole current at room temperature; this is the highest to date for sub 2 nm thin WS2 and more than 50 times larger than with metals like Ni or Pd. The p-type conduction is enabled by the simultaneously high work function and low density of states of the NbP, which reduce Fermi level pinning. These contacts are sputter-deposited at room temperature, an approach compatible with CMOS fabrication, a step towards enabling ultrathin WS2 semiconductors in future nanoelectronics. |
| title | Enabling P-type Conduction in Bilayer WS2 with NbP Topological Semimetal Contacts |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2409.18926 |