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Hauptverfasser: Tan, Chao-Yang, Gao, Ze-Feng, Yang, Huan-Cheng, Liu, Zheng-Xin, Liu, Kai, Guo, Peng-Jie, Lu, Zhong-Yi
Format: Preprint
Veröffentlicht: 2024
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Online-Zugang:https://arxiv.org/abs/2410.00073
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author Tan, Chao-Yang
Gao, Ze-Feng
Yang, Huan-Cheng
Liu, Zheng-Xin
Liu, Kai
Guo, Peng-Jie
Lu, Zhong-Yi
author_facet Tan, Chao-Yang
Gao, Ze-Feng
Yang, Huan-Cheng
Liu, Zheng-Xin
Liu, Kai
Guo, Peng-Jie
Lu, Zhong-Yi
contents The time-reversal symmetry is thought to be a necessary condition for realizing valley Hall effect. If the time-reversal symmetry is broken, whether the valley Hall effect can be realized has not been explored. In this letter, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that the vally Hall effect without time-reversal symmetry can be realized in two-dimensional altermagnetic materials Fe$_2$WSe$_4$ and Fe$_2$WS$_4$. Due to crystal symmetry required, the vally Hall effect without time-reversal symmetry is called crystal vally Hall effect. In addition, under uniaxial strain, both monolayer Fe$_2$WSe$_4$ and Fe$_2$WS$_4$ can realize piezomagnetic effect. Under biaxial compressive stress, both monolayer Fe$_2$WSe$_4$ and Fe$_2$WS$_4$ will transform from altermagnetic semiconductor phase to bipolarized topological Weyl semimetal phase. Our work not only provides a new direction for exploring the novel valley Hall effect, but also provides a good platform for exploring altermagnetic semiconductors and altermagnetic topological phase transitions.
format Preprint
id arxiv_https___arxiv_org_abs_2410_00073
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Crystal valley Hall effect
Tan, Chao-Yang
Gao, Ze-Feng
Yang, Huan-Cheng
Liu, Zheng-Xin
Liu, Kai
Guo, Peng-Jie
Lu, Zhong-Yi
Materials Science
The time-reversal symmetry is thought to be a necessary condition for realizing valley Hall effect. If the time-reversal symmetry is broken, whether the valley Hall effect can be realized has not been explored. In this letter, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that the vally Hall effect without time-reversal symmetry can be realized in two-dimensional altermagnetic materials Fe$_2$WSe$_4$ and Fe$_2$WS$_4$. Due to crystal symmetry required, the vally Hall effect without time-reversal symmetry is called crystal vally Hall effect. In addition, under uniaxial strain, both monolayer Fe$_2$WSe$_4$ and Fe$_2$WS$_4$ can realize piezomagnetic effect. Under biaxial compressive stress, both monolayer Fe$_2$WSe$_4$ and Fe$_2$WS$_4$ will transform from altermagnetic semiconductor phase to bipolarized topological Weyl semimetal phase. Our work not only provides a new direction for exploring the novel valley Hall effect, but also provides a good platform for exploring altermagnetic semiconductors and altermagnetic topological phase transitions.
title Crystal valley Hall effect
topic Materials Science
url https://arxiv.org/abs/2410.00073