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| Main Authors: | , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.00241 |
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| _version_ | 1866916420293492736 |
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| author | D'Anna, Nicolò Bragg, Jamie Skoropata, Elizabeth Hernández, Nazareth Ortiz McConnell, Aidan G. Clémence, Maël Ueda, Hiroki Constantinou, Procopios C. Spruce, Kieran Stock, Taylor J. Z. Fearn, Sarah Schofield, Steven R. Curson, Neil J. Sanchez, Dario Ferreira Grolimund, Daniel Staub, Urs Matmon, Guy Gerber, Simon Aeppli, Gabriel |
| author_facet | D'Anna, Nicolò Bragg, Jamie Skoropata, Elizabeth Hernández, Nazareth Ortiz McConnell, Aidan G. Clémence, Maël Ueda, Hiroki Constantinou, Procopios C. Spruce, Kieran Stock, Taylor J. Z. Fearn, Sarah Schofield, Steven R. Curson, Neil J. Sanchez, Dario Ferreira Grolimund, Daniel Staub, Urs Matmon, Guy Gerber, Simon Aeppli, Gabriel |
| contents | Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging.
Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_00241 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Element-specific, non-destructive profiling of layered heterostructures D'Anna, Nicolò Bragg, Jamie Skoropata, Elizabeth Hernández, Nazareth Ortiz McConnell, Aidan G. Clémence, Maël Ueda, Hiroki Constantinou, Procopios C. Spruce, Kieran Stock, Taylor J. Z. Fearn, Sarah Schofield, Steven R. Curson, Neil J. Sanchez, Dario Ferreira Grolimund, Daniel Staub, Urs Matmon, Guy Gerber, Simon Aeppli, Gabriel Quantum Physics Mesoscale and Nanoscale Physics Materials Science Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging. Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates. |
| title | Element-specific, non-destructive profiling of layered heterostructures |
| topic | Quantum Physics Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2410.00241 |