High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits
Fuente:
arXiv
Saved in:
| Main Authors: | Kong, Zhenzhen, Li, Zonghu, Zhou, Yuchen, Cao, Gang, Li, Hai-Ou, Su, Jiale, Zhang, Yiwen, Liu, Jinbiao, Guo, Guo-Ping, Li, Junfeng, Luo, Jun, Zhao, Chao, Ye, Tianchun, Wang, Guilei |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
by: Ma, Jingrui, et al.
Published: (2026)
by: Ma, Jingrui, et al.
Published: (2026)
Nuclear Spin‐Free 70 Ge/ 28 Si 70 Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers
by: Patrick Daoust, et al.
Published: (2026)
by: Patrick Daoust, et al.
Published: (2026)
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
by: Thayil, Abel, et al.
Published: (2025)
by: Thayil, Abel, et al.
Published: (2025)
Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
by: Wang, Ning, et al.
Published: (2024)
by: Wang, Ning, et al.
Published: (2024)
Effect of Stochastic Charge Noise in Si/SiGe Quantum-Dot Spin Qubits
by: Chiu, Wei-en, et al.
Published: (2025)
by: Chiu, Wei-en, et al.
Published: (2025)
Phonon-Induced Exchange Gate Infidelities in Semiconducting Si-SiGe Spin Qubits
by: Brooks, Matthew, et al.
Published: (2024)
by: Brooks, Matthew, et al.
Published: (2024)
Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
by: Dsouza, Kelvin, et al.
Published: (2024)
by: Dsouza, Kelvin, et al.
Published: (2024)
High-fidelity EDSR in Si/SiGe Wiggle Wells
by: Soomro, Hudaiba, et al.
Published: (2026)
by: Soomro, Hudaiba, et al.
Published: (2026)
High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
by: Nigro, Arianna, et al.
Published: (2024)
by: Nigro, Arianna, et al.
Published: (2024)
Valley Splittings in Si/SiGe Heterostructures from First Principles
by: Cvitkovich, Lukas, et al.
Published: (2025)
by: Cvitkovich, Lukas, et al.
Published: (2025)
Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder
by: Thayil, Abel, et al.
Published: (2024)
by: Thayil, Abel, et al.
Published: (2024)
Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces
by: Christoph Zechner, et al.
Published: (2024)
by: Christoph Zechner, et al.
Published: (2024)
Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
by: Losert, Merritt P., et al.
Published: (2023)
by: Losert, Merritt P., et al.
Published: (2023)
Persistence of Entangled States and High Fidelity Quantum Gate Operations in Si/SiGe Spin Qubits at High Temperature
by: Amitonov, S., et al.
Published: (2024)
by: Amitonov, S., et al.
Published: (2024)
Electrical Characterization of hexagonal SiGe
by: Bollier, Isabelle, et al.
Published: (2025)
by: Bollier, Isabelle, et al.
Published: (2025)
SiGe/Si(111)/SiGe heterostructure for Si spin qubits with electrons confined in L valley of conduction band
by: Tokunaga, Takafumi, et al.
Published: (2026)
by: Tokunaga, Takafumi, et al.
Published: (2026)
g-tensor Optimization in Ge/SiGe Quantum Dots
by: Shojaei, Aram, et al.
Published: (2026)
by: Shojaei, Aram, et al.
Published: (2026)
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
by: Stehouwer, Lucas E. A., et al.
Published: (2025)
Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates
by: Park, Jaemin, et al.
Published: (2025)
by: Park, Jaemin, et al.
Published: (2025)
Physics Guided Exponential Model Design of High Ge Content SiGe Selective Epitaxy for Gate All Around Source/Drain Applications
by: Li, Zhigang, et al.
Published: (2026)
by: Li, Zhigang, et al.
Published: (2026)
Low-Noise Quantum Dots in Ultra-Shallow Ge/SiGe Heterostructures for Prototyping Hybrid Semiconducting-Superconducting Devices
by: Borovkov, M., et al.
Published: (2026)
by: Borovkov, M., et al.
Published: (2026)
New device applications of SiGe heterostructures
by: Shiraki Yasuhiro
Published: (2003)
by: Shiraki Yasuhiro
Published: (2003)
Strain Engineering of Ge Quantum Wells in Planar Ge/Si 1 − x Ge x Heterostructures
by: Arianna Nigro, et al.
Published: (2025)
by: Arianna Nigro, et al.
Published: (2025)
Si/SiGe multi-channel superlattice structure epitaxial growth with segmented temperature control for Next-Generation Logic Devices
by: Yao, Wenlong, et al.
Published: (2026)
by: Yao, Wenlong, et al.
Published: (2026)
Mid‐Infrared Intersubband Transitions in p ‐Type SiGe Parabolic Quantum Wells
by: Marco Faverzani, et al.
Published: (2025)
by: Marco Faverzani, et al.
Published: (2025)
Reducing disorder in Ge quantum wells by using thick SiGe barriers
by: Costa, Davide, et al.
Published: (2024)
by: Costa, Davide, et al.
Published: (2024)
Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
by: Struck, Tom, et al.
Published: (2023)
by: Struck, Tom, et al.
Published: (2023)
On-chip cryogenic multiplexing of Si/SiGe quantum devices
by: Wolfe, M. A., et al.
Published: (2024)
by: Wolfe, M. A., et al.
Published: (2024)
Ohmic Contact Engineering in Strained Si/SiGe Heterostructures for Cryo‐Electronics Operating at 1.5 K
by: Fabian Fidorra, et al.
Published: (2026)
by: Fabian Fidorra, et al.
Published: (2026)
Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
by: Cakar, Efe, et al.
Published: (2024)
by: Cakar, Efe, et al.
Published: (2024)
Statistical Structure of Charge Disorder in Si/SiGe Quantum Dots
by: Samadi, Saeed, et al.
Published: (2025)
by: Samadi, Saeed, et al.
Published: (2025)
Active Noise Reduction in Si/SiGe Gated Quantum Dots
by: Bharadwaj, Rajat, et al.
Published: (2025)
by: Bharadwaj, Rajat, et al.
Published: (2025)
Characterization of individual charge fluctuators in Si/SiGe quantum dots
by: Ye, Feiyang, et al.
Published: (2024)
by: Ye, Feiyang, et al.
Published: (2024)
High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
by: Christopher R. Allemang, et al.
Published: (2025)
by: Christopher R. Allemang, et al.
Published: (2025)
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
by: Stark, David, et al.
Published: (2021)
by: Stark, David, et al.
Published: (2021)
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
by: Massai, L., et al.
Published: (2023)
by: Massai, L., et al.
Published: (2023)
Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
by: Sommer, L., et al.
Published: (2026)
by: Sommer, L., et al.
Published: (2026)
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
by: Ruggiero, Luigi, et al.
Published: (2025)
by: Ruggiero, Luigi, et al.
Published: (2025)
World's First Monolithic SiGe QKD Transmitter Chip
by: Honz, Florian, et al.
Published: (2025)
by: Honz, Florian, et al.
Published: (2025)
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
by: Daoust, P., et al.
Published: (2025)
by: Daoust, P., et al.
Published: (2025)
Similar Items
-
Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
by: Ma, Jingrui, et al.
Published: (2026) -
Nuclear Spin‐Free 70 Ge/ 28 Si 70 Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers
by: Patrick Daoust, et al.
Published: (2026) -
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
by: Thayil, Abel, et al.
Published: (2025) -
Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
by: Wang, Ning, et al.
Published: (2024) -
Effect of Stochastic Charge Noise in Si/SiGe Quantum-Dot Spin Qubits
by: Chiu, Wei-en, et al.
Published: (2025)