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Main Authors: Paul, Mousri, Karmakar, Sabyasachi, Sharma, Jay, Bhunia, Satyaban, Chakraborty, Supratic
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2410.02517
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author Paul, Mousri
Karmakar, Sabyasachi
Sharma, Jay
Bhunia, Satyaban
Chakraborty, Supratic
author_facet Paul, Mousri
Karmakar, Sabyasachi
Sharma, Jay
Bhunia, Satyaban
Chakraborty, Supratic
contents The complex interaction between the intrinsic and extrinsic state variables of strongly correlated insulator thin films is drawing interest as it shows memristive behavior that may be used in neuromorphic computing. In this study, we have observed that laser irradiation in cerium oxide thin film helps to make transition from metastable state. We study the transport properties of cerium oxide thin film which shows the metal-insulator transition. As for ceria the reduction of oxidation states depends upon oxygen vacancy defects which can be controlled by external ways due to which the transport property can vary. In this study, a decrease in the value of transition temperature under dark conditions was observed as laser-induced and we have explained this result by the generation of energy states observed from temperature-dependent photoluminescence (PL) study, oxygen vacancy defects, and polaron hopping within ceria.
format Preprint
id arxiv_https___arxiv_org_abs_2410_02517
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Laser induced transition in Cerium Oxide thin film
Paul, Mousri
Karmakar, Sabyasachi
Sharma, Jay
Bhunia, Satyaban
Chakraborty, Supratic
Materials Science
The complex interaction between the intrinsic and extrinsic state variables of strongly correlated insulator thin films is drawing interest as it shows memristive behavior that may be used in neuromorphic computing. In this study, we have observed that laser irradiation in cerium oxide thin film helps to make transition from metastable state. We study the transport properties of cerium oxide thin film which shows the metal-insulator transition. As for ceria the reduction of oxidation states depends upon oxygen vacancy defects which can be controlled by external ways due to which the transport property can vary. In this study, a decrease in the value of transition temperature under dark conditions was observed as laser-induced and we have explained this result by the generation of energy states observed from temperature-dependent photoluminescence (PL) study, oxygen vacancy defects, and polaron hopping within ceria.
title Laser induced transition in Cerium Oxide thin film
topic Materials Science
url https://arxiv.org/abs/2410.02517