Symmetry-controlled orbital Hall effect in IrO$_2$

Fuente: arXiv
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Autores principales: Patton, Michael, Go, Dongwook, Pharis, Daniel A., Huang, Xiaoxi, Gurung, Gautam, Tsymbal, Evgeny Y., Ralph, Daniel C., Rzchowski, Mark S., Mokrousov, Yuriy, Eom, Chang-Beom
Formato: Preprint
Publicado: 2024
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author Patton, Michael
Go, Dongwook
Pharis, Daniel A.
Huang, Xiaoxi
Gurung, Gautam
Tsymbal, Evgeny Y.
Ralph, Daniel C.
Rzchowski, Mark S.
Mokrousov, Yuriy
Eom, Chang-Beom
author_facet Patton, Michael
Go, Dongwook
Pharis, Daniel A.
Huang, Xiaoxi
Gurung, Gautam
Tsymbal, Evgeny Y.
Ralph, Daniel C.
Rzchowski, Mark S.
Mokrousov, Yuriy
Eom, Chang-Beom
contents Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents, similar to spin currents, have the ability to generate torque on adjacent magnetic layers, opening a new avenue for efficient spintronic devices. However, separating spin and orbital currents has been one of the major challenges. Here, we show evidence for large conventional as well as unconventional spin and orbital currents in IrO$_2$ and disentangle them by crystal symmetry. We study the anisotropic spin and orbital Hall effects in IrO$_2$ (001), (100), and (111) orientations and find unconventional z-polarized orbital torques using angular spin torque ferromagnetic resonance of IrO$_2$/Ni heterostructures, which are in agreement regarding the relative signs with theoretical calculations of spin and orbital Hall conductivity. This work provides a promising route towards highly efficient low power spintronic and orbitronic devices in oxide heterostructures.
format Preprint
id arxiv_https___arxiv_org_abs_2410_02996
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Symmetry-controlled orbital Hall effect in IrO$_2$
Patton, Michael
Go, Dongwook
Pharis, Daniel A.
Huang, Xiaoxi
Gurung, Gautam
Tsymbal, Evgeny Y.
Ralph, Daniel C.
Rzchowski, Mark S.
Mokrousov, Yuriy
Eom, Chang-Beom
Materials Science
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents, similar to spin currents, have the ability to generate torque on adjacent magnetic layers, opening a new avenue for efficient spintronic devices. However, separating spin and orbital currents has been one of the major challenges. Here, we show evidence for large conventional as well as unconventional spin and orbital currents in IrO$_2$ and disentangle them by crystal symmetry. We study the anisotropic spin and orbital Hall effects in IrO$_2$ (001), (100), and (111) orientations and find unconventional z-polarized orbital torques using angular spin torque ferromagnetic resonance of IrO$_2$/Ni heterostructures, which are in agreement regarding the relative signs with theoretical calculations of spin and orbital Hall conductivity. This work provides a promising route towards highly efficient low power spintronic and orbitronic devices in oxide heterostructures.
title Symmetry-controlled orbital Hall effect in IrO$_2$
topic Materials Science
url https://arxiv.org/abs/2410.02996