High-fidelity spin readout via the double latching mechanism

Fuente: arXiv
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Autores principales: Kiyama, Haruki, Hien, Danny van Hien, Ludwig, Arne, Wieck, Andreas D., Oiwa, Akira
Formato: Preprint
Publicado: 2024
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author Kiyama, Haruki
Hien, Danny van Hien
Ludwig, Arne
Wieck, Andreas D.
Oiwa, Akira
author_facet Kiyama, Haruki
Hien, Danny van Hien
Ludwig, Arne
Wieck, Andreas D.
Oiwa, Akira
contents Projective measurement of single electron spins, or spin readout, is among the most fundamental technologies for spin-based quantum information processing. Implementing spin readout with both high-fidelity and scalability is indispensable for developing fault-tolerant quantum computers in large-scale spin-qubit arrays. To achieve high fidelity, a latching mechanism is useful. However, the fidelity can be decreased by spin relaxation and charge state leakage, and the scalability is currently challenging. Here, we propose and demonstrate a double-latching high-fidelity spin readout scheme, which suppresses errors via an additional latching process. We experimentally show that the double-latching mechanism provides significantly higher fidelity than the conventional latching mechanism and estimate a potential spin readout fidelity of 99.94% using highly spin-dependent tunnel rates. Due to isolation from error-inducing processes, the double-latching mechanism combined with scalable charge readout is expected to be useful for large-scale spin-qubit arrays while maintaining high fidelity.
format Preprint
id arxiv_https___arxiv_org_abs_2410_03199
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle High-fidelity spin readout via the double latching mechanism
Kiyama, Haruki
Hien, Danny van Hien
Ludwig, Arne
Wieck, Andreas D.
Oiwa, Akira
Mesoscale and Nanoscale Physics
Projective measurement of single electron spins, or spin readout, is among the most fundamental technologies for spin-based quantum information processing. Implementing spin readout with both high-fidelity and scalability is indispensable for developing fault-tolerant quantum computers in large-scale spin-qubit arrays. To achieve high fidelity, a latching mechanism is useful. However, the fidelity can be decreased by spin relaxation and charge state leakage, and the scalability is currently challenging. Here, we propose and demonstrate a double-latching high-fidelity spin readout scheme, which suppresses errors via an additional latching process. We experimentally show that the double-latching mechanism provides significantly higher fidelity than the conventional latching mechanism and estimate a potential spin readout fidelity of 99.94% using highly spin-dependent tunnel rates. Due to isolation from error-inducing processes, the double-latching mechanism combined with scalable charge readout is expected to be useful for large-scale spin-qubit arrays while maintaining high fidelity.
title High-fidelity spin readout via the double latching mechanism
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2410.03199