Reducing disorder in Ge quantum wells by using thick SiGe barriers
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arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| author | Costa, Davide Stehouwer, Lucas E. A. Huang, Yi Martí-Sánchez, Sara Esposti, Davide Degli Arbiol, Jordi Scappucci, Giordano |
| author_facet | Costa, Davide Stehouwer, Lucas E. A. Huang, Yi Martí-Sánchez, Sara Esposti, Davide Degli Arbiol, Jordi Scappucci, Giordano |
| contents | We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors we measure an average maximum mobility of $(4.4 \pm 0.2) \times 10^{6}~\mathrm{cm^2/Vs}$ at a saturation density of $(1.72 \pm 0.03) \times 10^{11}~\mathrm{cm^{-2}}$, corresponding to a long mean free path of $(30 \pm 1)~\mathrm{μm}$. The highest measured mobility is $4.68 \times 10^{6}~\mathrm{cm^2/Vs}$. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of $(4.5 \pm 0.1)\times 10^{9} ~\mathrm{cm^{-2}}$. This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_03256 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Reducing disorder in Ge quantum wells by using thick SiGe barriers Costa, Davide Stehouwer, Lucas E. A. Huang, Yi Martí-Sánchez, Sara Esposti, Davide Degli Arbiol, Jordi Scappucci, Giordano Mesoscale and Nanoscale Physics Materials Science We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors we measure an average maximum mobility of $(4.4 \pm 0.2) \times 10^{6}~\mathrm{cm^2/Vs}$ at a saturation density of $(1.72 \pm 0.03) \times 10^{11}~\mathrm{cm^{-2}}$, corresponding to a long mean free path of $(30 \pm 1)~\mathrm{μm}$. The highest measured mobility is $4.68 \times 10^{6}~\mathrm{cm^2/Vs}$. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of $(4.5 \pm 0.1)\times 10^{9} ~\mathrm{cm^{-2}}$. This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots. |
| title | Reducing disorder in Ge quantum wells by using thick SiGe barriers |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2410.03256 |