Combined Raman spectroscopy and electrical transport measurements in ultra-high vacuum down to 3.7 K
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arXiv
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| Format: | Preprint |
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2024
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| author | Shchukin, Konstantin P. Hell, Martin Grüneis, Alexander |
| author_facet | Shchukin, Konstantin P. Hell, Martin Grüneis, Alexander |
| contents | An instrument for the simultaneous characterization of thin films by Raman spectroscopy and electronic transport down to 3.7 K has been designed and built. This setup allows for the in-situ preparation of air-sensitive samples, their spectroscopic characterization by Raman spectroscopy with different laser lines and five-probe electronic transport measurements using sample plates with prefabricated contacts. The lowest temperatures that can be achieved on the sample are directly proven by measuring the superconducting transition of a Niobium film. The temperature-dependent Raman shift and narrowing of the Silicon F_{2g} Raman line are shown. This experimental system is specially designed for in-situ functionalization, optical spectroscopic and electron transport investigation of thin films. It allows for easy on-the-fly change of samples without the need to warm up the cryomanipulator. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_03271 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Combined Raman spectroscopy and electrical transport measurements in ultra-high vacuum down to 3.7 K Shchukin, Konstantin P. Hell, Martin Grüneis, Alexander Instrumentation and Detectors An instrument for the simultaneous characterization of thin films by Raman spectroscopy and electronic transport down to 3.7 K has been designed and built. This setup allows for the in-situ preparation of air-sensitive samples, their spectroscopic characterization by Raman spectroscopy with different laser lines and five-probe electronic transport measurements using sample plates with prefabricated contacts. The lowest temperatures that can be achieved on the sample are directly proven by measuring the superconducting transition of a Niobium film. The temperature-dependent Raman shift and narrowing of the Silicon F_{2g} Raman line are shown. This experimental system is specially designed for in-situ functionalization, optical spectroscopic and electron transport investigation of thin films. It allows for easy on-the-fly change of samples without the need to warm up the cryomanipulator. |
| title | Combined Raman spectroscopy and electrical transport measurements in ultra-high vacuum down to 3.7 K |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2410.03271 |