Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909336324800512 |
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| author | Wilflingseder, Christoph Aberl, Johannes Navarette, Enrique Prado Hesser, Günter Groiss, Heiko Liedke, Maciej O. Butterling, Maik Wagner, Andreas Hirschmann, Eric Corley-Wiciak, Cedric Zoellner, Marvin H. Capellini, Giovanni Fromherz, Thomas Brehm, Moritz |
| author_facet | Wilflingseder, Christoph Aberl, Johannes Navarette, Enrique Prado Hesser, Günter Groiss, Heiko Liedke, Maciej O. Butterling, Maik Wagner, Andreas Hirschmann, Eric Corley-Wiciak, Cedric Zoellner, Marvin H. Capellini, Giovanni Fromherz, Thomas Brehm, Moritz |
| contents | Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage ($θ_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_03295 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment Wilflingseder, Christoph Aberl, Johannes Navarette, Enrique Prado Hesser, Günter Groiss, Heiko Liedke, Maciej O. Butterling, Maik Wagner, Andreas Hirschmann, Eric Corley-Wiciak, Cedric Zoellner, Marvin H. Capellini, Giovanni Fromherz, Thomas Brehm, Moritz Materials Science Mesoscale and Nanoscale Physics Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultra-low growth temperatures ($T_{Ge} = 100^{\circ}\mathrm{C}-350^{\circ}\mathrm{C}$) and pristine growth pressures ($\lesssim 10^{-10}\,\mathrm{mbar}$). First, we show that $T_{Ge}$ does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage ($θ_{Ge}$, 1, 2, 4, 8, 12, and 16 nm) and $T_{Ge}$ ($100^{\circ}\mathrm{C}$ to $300^{\circ}\mathrm{C}$, in increments of $50^{\circ}\mathrm{C}$) to assess the influence of these parameters on the layer's structural quality. Atomic force microscopy revealed a rippled surface topography with superimposed grainy features and the absence of three-dimensional structures, such as quantum dots. Transmission electron microscopy unveiled pseudomorphic, grains of highly crystalline growth separated by defective domains. Thanks to nanobeam scanning x-ray diffraction measurements, we were able to evidence the lattice strain fluctuations due to the ripple-like structure of the layers. We conclude that the heteroepitaxial strain contributes to the formation of the ripples, which originate from the kinetic limitations of the ultra-low temperatures. |
| title | Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.03295 |