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Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Fuente: arXiv

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Bibliographic Details
Main Authors:	Nagaya, Narumi, Alexiu, Alexandra, Perkinson, Collin F., Nix, Oliver M., Bawendi, Moungi G., Tisdale, William A., Van Voorhis, Troy, Baldo, Marc A.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Chemical Physics
Online Access:	Acceder al recurso
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