Designing (higher) Hall crystals

Fuente: arXiv
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Autores principales: Paul, Nisarga, Shavit, Gal, Fu, Liang
Formato: Preprint
Publicado: 2024
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author Paul, Nisarga
Shavit, Gal
Fu, Liang
author_facet Paul, Nisarga
Shavit, Gal
Fu, Liang
contents We introduce a novel platform for realizing interaction-induced Hall crystals with diverse Chern numbers $C$. This platform consists of a two-dimensional semiconductor or graphene subjected to an out-of-plane magnetic field and a one-dimensional modulation, which can be realized by moiré or dielectric engineering. We show that interactions drive the system to spontaneously break the residual translational symmetry, resulting in Hall crystals with various $C$ (including $|C|>1$). Remarkably, these phases persist across continuous ranges of filling and magnetic field, and the global phase diagram can be understood in a unified manner.
format Preprint
id arxiv_https___arxiv_org_abs_2410_03888
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Designing (higher) Hall crystals
Paul, Nisarga
Shavit, Gal
Fu, Liang
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
We introduce a novel platform for realizing interaction-induced Hall crystals with diverse Chern numbers $C$. This platform consists of a two-dimensional semiconductor or graphene subjected to an out-of-plane magnetic field and a one-dimensional modulation, which can be realized by moiré or dielectric engineering. We show that interactions drive the system to spontaneously break the residual translational symmetry, resulting in Hall crystals with various $C$ (including $|C|>1$). Remarkably, these phases persist across continuous ranges of filling and magnetic field, and the global phase diagram can be understood in a unified manner.
title Designing (higher) Hall crystals
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2410.03888