Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

Fuente: arXiv

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Bibliographic Details
Main Authors:	Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc, Campbell, Aidan F, John, Philipp, Auzelle, Thomas, Trampert, Achim, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2410.04206