Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866917795730554880 |
|---|---|
| author | Kang, Jingxuan Ruiz, Mikel Gómez Van Dinh, Duc Campbell, Aidan F John, Philipp Auzelle, Thomas Trampert, Achim Lähnemann, Jonas Brandt, Oliver Geelhaar, Lutz |
| author_facet | Kang, Jingxuan Ruiz, Mikel Gómez Van Dinh, Duc Campbell, Aidan F John, Philipp Auzelle, Thomas Trampert, Achim Lähnemann, Jonas Brandt, Oliver Geelhaar, Lutz |
| contents | 500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and cathodoluminescence as well as photoluminescence spectroscopy. We demonstrate low degrees of strain relaxation (10% for $x=0.12$), low threading dislocation densities ($\mathrm{1\times10^{9}\,cm^{-2}}$ for $x=0.12$), uniform composition both in the growth and lateral direction, and a narrow emission band. The unique sum of excellent materials properties make these layers an attractive basis for the top-down fabrication of ternary nanowires. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_04206 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy Kang, Jingxuan Ruiz, Mikel Gómez Van Dinh, Duc Campbell, Aidan F John, Philipp Auzelle, Thomas Trampert, Achim Lähnemann, Jonas Brandt, Oliver Geelhaar, Lutz Materials Science Applied Physics 500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass spectrometry, and cathodoluminescence as well as photoluminescence spectroscopy. We demonstrate low degrees of strain relaxation (10% for $x=0.12$), low threading dislocation densities ($\mathrm{1\times10^{9}\,cm^{-2}}$ for $x=0.12$), uniform composition both in the growth and lateral direction, and a narrow emission band. The unique sum of excellent materials properties make these layers an attractive basis for the top-down fabrication of ternary nanowires. |
| title | Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2410.04206 |