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| Autori principali: | , , , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2410.05818 |
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| _version_ | 1866913537552547840 |
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| author | Tang, Beibei Li, Bo Sun, Yingying Li, Jianshun Guo, Yanheng Song, Jiaojiao Yan, Xiaohan Zhang, Huimin Wang, Xiaosuo Chen, Fei Wang, Lei Du, Jiangfeng Shen, Huaibin Fan, Fengjia |
| author_facet | Tang, Beibei Li, Bo Sun, Yingying Li, Jianshun Guo, Yanheng Song, Jiaojiao Yan, Xiaohan Zhang, Huimin Wang, Xiaosuo Chen, Fei Wang, Lei Du, Jiangfeng Shen, Huaibin Fan, Fengjia |
| contents | Hot electrons are theoretically predicted to be long-lived in strongly confined quantum dots, which could play vital roles in quantum dot-based optoelectronics; however, existing photoexcitation transient spectroscopy investigations reveal that their lifetime is less than 1 ps in well-passivated quantum dots because of the ultrafast electron-hole Auger-assisted cooling. Therefore, they are generally considered absent in quantum dot optoelectronic devices. Here, by using our newly developed electrically excited transient absorption spectroscopy, we surprisingly observed abundant hot electrons in both II-VI and III-VI compound quantum dot light-emitting diodes at elevated bias (>4 V), of which the lifetimes reach 59 to 371 ns, lengthened by more than 5 orders of magnitude compared with the photoexcited hot electrons. These results experimentally prove the presence of a strong phonon bottleneck effect, refreshing our understanding of the role of hot electrons in quantum dot optoelectronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_05818 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hot electron lifetime exceeds 300 nanoseconds in quantum dots with high quantum efficiency Tang, Beibei Li, Bo Sun, Yingying Li, Jianshun Guo, Yanheng Song, Jiaojiao Yan, Xiaohan Zhang, Huimin Wang, Xiaosuo Chen, Fei Wang, Lei Du, Jiangfeng Shen, Huaibin Fan, Fengjia Mesoscale and Nanoscale Physics Hot electrons are theoretically predicted to be long-lived in strongly confined quantum dots, which could play vital roles in quantum dot-based optoelectronics; however, existing photoexcitation transient spectroscopy investigations reveal that their lifetime is less than 1 ps in well-passivated quantum dots because of the ultrafast electron-hole Auger-assisted cooling. Therefore, they are generally considered absent in quantum dot optoelectronic devices. Here, by using our newly developed electrically excited transient absorption spectroscopy, we surprisingly observed abundant hot electrons in both II-VI and III-VI compound quantum dot light-emitting diodes at elevated bias (>4 V), of which the lifetimes reach 59 to 371 ns, lengthened by more than 5 orders of magnitude compared with the photoexcited hot electrons. These results experimentally prove the presence of a strong phonon bottleneck effect, refreshing our understanding of the role of hot electrons in quantum dot optoelectronics. |
| title | Hot electron lifetime exceeds 300 nanoseconds in quantum dots with high quantum efficiency |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.05818 |