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Main Authors: Taghinejad, Hossein, Taghinejad, Mohammad, Abdollahramezani, Sajjad, Li, Qitong, Woods, Eric V., Tian, Mengkun, Eftekhar, Ali A., Lyu, Yuanqi, Zhang, Xiang, Ajayan, Pulickel M., Cai, Wenshan, Brongersma, Mark L., Analytis, James G., Adibi, Ali
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2410.06181
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author Taghinejad, Hossein
Taghinejad, Mohammad
Abdollahramezani, Sajjad
Li, Qitong
Woods, Eric V.
Tian, Mengkun
Eftekhar, Ali A.
Lyu, Yuanqi
Zhang, Xiang
Ajayan, Pulickel M.
Cai, Wenshan
Brongersma, Mark L.
Analytis, James G.
Adibi, Ali
author_facet Taghinejad, Hossein
Taghinejad, Mohammad
Abdollahramezani, Sajjad
Li, Qitong
Woods, Eric V.
Tian, Mengkun
Eftekhar, Ali A.
Lyu, Yuanqi
Zhang, Xiang
Ajayan, Pulickel M.
Cai, Wenshan
Brongersma, Mark L.
Analytis, James G.
Adibi, Ali
contents Achieving deterministic control over the properties of low-dimensional materials with nanoscale precision is a long-sought goal. Mastering this capability has a transformative impact on the design of multifunctional electrical and optical devices. Here, we present an ion-assisted synthetic technique that enables precise control over the material composition and energy landscape of two-dimensional (2D) atomic crystals. Our method transforms binary transition metal dichalcogenides (TMDs), like MoSe$_2$, into ternary MoS$_{2α}$Se$_{2(1-α})$ alloys with systematically adjustable compositions, $α$. By piecewise assembly of the lateral, compositionally modulated MoS$_{2α}$Se$_{2(1-α)}$ segments within 2D atomic layers, we present a synthetic pathway towards the realization of multi-compositional designer materials. Our technique enables the fabrication of complex structures with arbitrary boundaries, dimensions as small as 30 nm, and fully customizable energy landscapes. Our optical characterizations further showcase the potential for implementing tailored optoelectronics in these engineered 2D crystals.
format Preprint
id arxiv_https___arxiv_org_abs_2410_06181
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Ion-Assisted Nanoscale Material Engineering in Atomic Layers
Taghinejad, Hossein
Taghinejad, Mohammad
Abdollahramezani, Sajjad
Li, Qitong
Woods, Eric V.
Tian, Mengkun
Eftekhar, Ali A.
Lyu, Yuanqi
Zhang, Xiang
Ajayan, Pulickel M.
Cai, Wenshan
Brongersma, Mark L.
Analytis, James G.
Adibi, Ali
Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
Achieving deterministic control over the properties of low-dimensional materials with nanoscale precision is a long-sought goal. Mastering this capability has a transformative impact on the design of multifunctional electrical and optical devices. Here, we present an ion-assisted synthetic technique that enables precise control over the material composition and energy landscape of two-dimensional (2D) atomic crystals. Our method transforms binary transition metal dichalcogenides (TMDs), like MoSe$_2$, into ternary MoS$_{2α}$Se$_{2(1-α})$ alloys with systematically adjustable compositions, $α$. By piecewise assembly of the lateral, compositionally modulated MoS$_{2α}$Se$_{2(1-α)}$ segments within 2D atomic layers, we present a synthetic pathway towards the realization of multi-compositional designer materials. Our technique enables the fabrication of complex structures with arbitrary boundaries, dimensions as small as 30 nm, and fully customizable energy landscapes. Our optical characterizations further showcase the potential for implementing tailored optoelectronics in these engineered 2D crystals.
title Ion-Assisted Nanoscale Material Engineering in Atomic Layers
topic Materials Science
Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2410.06181