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| Format: | Preprint |
| Veröffentlicht: |
2024
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| Online-Zugang: | https://arxiv.org/abs/2410.07042 |
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| _version_ | 1866929534093230080 |
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| author | Ames, Alessandra Sousa, Frederico B. Souza, Gabriel A. D. de Oliveira, Raphaela Silva, Igor R. F. Rodrigues, Gabriel L. Watanabe, Kenji Taniguchi, Takashi Marques, Gilmar E. Barcelos, Ingrid D. Cadore, Alisson R. López-Richard, Victor Teodoro, Marcio D. |
| author_facet | Ames, Alessandra Sousa, Frederico B. Souza, Gabriel A. D. de Oliveira, Raphaela Silva, Igor R. F. Rodrigues, Gabriel L. Watanabe, Kenji Taniguchi, Takashi Marques, Gilmar E. Barcelos, Ingrid D. Cadore, Alisson R. López-Richard, Victor Teodoro, Marcio D. |
| contents | Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_07042 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Optical memory in a MoSe$_2$/Clinochlore device Ames, Alessandra Sousa, Frederico B. Souza, Gabriel A. D. de Oliveira, Raphaela Silva, Igor R. F. Rodrigues, Gabriel L. Watanabe, Kenji Taniguchi, Takashi Marques, Gilmar E. Barcelos, Ingrid D. Cadore, Alisson R. López-Richard, Victor Teodoro, Marcio D. Materials Science Mesoscale and Nanoscale Physics Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures. |
| title | Optical memory in a MoSe$_2$/Clinochlore device |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.07042 |