Saved in:
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.08580 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866910826886070272 |
|---|---|
| author | Kim, Youngmin Assali, Simone Ge, Junyu Koelling, Sebastian Luo, Manlin Luo, Lu Joo, Hyo-Jun Tan, James Shi, Xuncheng Ikonic, Zoran Li, Hong Moutanabbir, Oussama Nam, Donguk |
| author_facet | Kim, Youngmin Assali, Simone Ge, Junyu Koelling, Sebastian Luo, Manlin Luo, Lu Joo, Hyo-Jun Tan, James Shi, Xuncheng Ikonic, Zoran Li, Hong Moutanabbir, Oussama Nam, Donguk |
| contents | Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains challenging largely due to the use of III-V and II-VI semiconductors as gain media. These materials not only have high material costs, but also require inherently complex integration with Si-based fabrication processing, increasing overall costs and thereby limiting their large-scale adoption. Furthermore, these material-based nanowire lasers rarely emit above 2 um, which is a technologically important wavelength regime for various applications in imaging and quantum sensing. Recently, group-IV nanowires, particularly direct bandgap GeSn nanowires capable of emitting above 2 um, have emerged as promising cost-effective gain media for Si-compatible nanowire lasers, but there has been no successful demonstration of lasing from this seemingly promising nanowire platform. Herein, we report the experimental observation of lasing above 2 um from a single bottom-up grown GeSn nanowire. By harnessing strain engineering and optimized cavity designs simultaneously, the single GeSn nanowire achieves an amplified material gain that can sufficiently overcome minimized optical losses, resulting in a single-mode lasing with an ultra-low threshold of ~5.3 kW cm-2. Our finding paves the way for all-group IV mid-infrared photonic-integrated circuits with compact Si-compatible lasers for on-chip classical and quantum sensing and free-space communication. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_08580 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Mid-infrared group-IV nanowire laser Kim, Youngmin Assali, Simone Ge, Junyu Koelling, Sebastian Luo, Manlin Luo, Lu Joo, Hyo-Jun Tan, James Shi, Xuncheng Ikonic, Zoran Li, Hong Moutanabbir, Oussama Nam, Donguk Optics Applied Physics Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains challenging largely due to the use of III-V and II-VI semiconductors as gain media. These materials not only have high material costs, but also require inherently complex integration with Si-based fabrication processing, increasing overall costs and thereby limiting their large-scale adoption. Furthermore, these material-based nanowire lasers rarely emit above 2 um, which is a technologically important wavelength regime for various applications in imaging and quantum sensing. Recently, group-IV nanowires, particularly direct bandgap GeSn nanowires capable of emitting above 2 um, have emerged as promising cost-effective gain media for Si-compatible nanowire lasers, but there has been no successful demonstration of lasing from this seemingly promising nanowire platform. Herein, we report the experimental observation of lasing above 2 um from a single bottom-up grown GeSn nanowire. By harnessing strain engineering and optimized cavity designs simultaneously, the single GeSn nanowire achieves an amplified material gain that can sufficiently overcome minimized optical losses, resulting in a single-mode lasing with an ultra-low threshold of ~5.3 kW cm-2. Our finding paves the way for all-group IV mid-infrared photonic-integrated circuits with compact Si-compatible lasers for on-chip classical and quantum sensing and free-space communication. |
| title | Mid-infrared group-IV nanowire laser |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2410.08580 |