Oxygen vacancies in BaTiO3 based ferroelectrics: electron doping, history dependence of Tc and domain wall pinning
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2024
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| author | Cordero, Francesco Craciun, Floriana Silva Jr., Paulo Sergio da Zambrano, Michel Venet Mercadelli, Elisa Galizia, Pietro |
| author_facet | Cordero, Francesco Craciun, Floriana Silva Jr., Paulo Sergio da Zambrano, Michel Venet Mercadelli, Elisa Galizia, Pietro |
| contents | We measured the complex Young's modulus of BaTiO3-d, BaxSr1-xTi3-d (BST) and Ba0.85Ca0.15Zr0.1Ti0.9O3-d (BCTZ) during heating and cooling runs at various O deficiencies and aging times. The elastic energy loss has peaks due to the jumps of isolated O vacancies (VO) and reorientations of pairs of VO in the paraelectric phase, from which the respective rates and activation energies are measured. These rates control the mechanisms of domain clamping, pinning, fatigue, and anything related to the VO mobility. In the ferroelectric (FE) phase, the drop of the losses due to the domain wall motion upon introduction of VO monitors the degree of pinning. In addition, large shifts of Tc are observed at the same value of d upon varying the permanence time in the FE state, up to DTc = 21K in BST, while no aging effect is found in BCTZ.
The phenomenology is explained by considering that Tc is depressed mainly by the mobile electrons doped by VO. Each isolated VO dopes two electrons as itinerant Ti^3+ ions, but, when it forms a stable linear VO-Ti^2+-VO pair, the two electrons of the Ti^2+ are subtracted from the mobile ones, halving doping. The rise of Tc during the initial aging is then explained in terms of the progressive aggregation of the VO. Prolonging aging for years leads to a decrease of Tc, explained assuming that the most stable position of a VO is at 90^o domain walls, whose geometry is incompatible with the pairs. Then, after enough time the initially aggregated VO within the domains dissociate to decorate the 90^o walls, increasing doping and lowering Tc.
The absence of such effects in BCTZ is due to larger activation energy for pair reorientation and pair binding energy. Then, at room temperature practically all VO are paired and static over a time scale of hundreds of years, explaining the superior resistance of BCTZ to fatigue. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_08767 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Oxygen vacancies in BaTiO3 based ferroelectrics: electron doping, history dependence of Tc and domain wall pinning Cordero, Francesco Craciun, Floriana Silva Jr., Paulo Sergio da Zambrano, Michel Venet Mercadelli, Elisa Galizia, Pietro Materials Science We measured the complex Young's modulus of BaTiO3-d, BaxSr1-xTi3-d (BST) and Ba0.85Ca0.15Zr0.1Ti0.9O3-d (BCTZ) during heating and cooling runs at various O deficiencies and aging times. The elastic energy loss has peaks due to the jumps of isolated O vacancies (VO) and reorientations of pairs of VO in the paraelectric phase, from which the respective rates and activation energies are measured. These rates control the mechanisms of domain clamping, pinning, fatigue, and anything related to the VO mobility. In the ferroelectric (FE) phase, the drop of the losses due to the domain wall motion upon introduction of VO monitors the degree of pinning. In addition, large shifts of Tc are observed at the same value of d upon varying the permanence time in the FE state, up to DTc = 21K in BST, while no aging effect is found in BCTZ. The phenomenology is explained by considering that Tc is depressed mainly by the mobile electrons doped by VO. Each isolated VO dopes two electrons as itinerant Ti^3+ ions, but, when it forms a stable linear VO-Ti^2+-VO pair, the two electrons of the Ti^2+ are subtracted from the mobile ones, halving doping. The rise of Tc during the initial aging is then explained in terms of the progressive aggregation of the VO. Prolonging aging for years leads to a decrease of Tc, explained assuming that the most stable position of a VO is at 90^o domain walls, whose geometry is incompatible with the pairs. Then, after enough time the initially aggregated VO within the domains dissociate to decorate the 90^o walls, increasing doping and lowering Tc. The absence of such effects in BCTZ is due to larger activation energy for pair reorientation and pair binding energy. Then, at room temperature practically all VO are paired and static over a time scale of hundreds of years, explaining the superior resistance of BCTZ to fatigue. |
| title | Oxygen vacancies in BaTiO3 based ferroelectrics: electron doping, history dependence of Tc and domain wall pinning |
| topic | Materials Science |
| url | https://arxiv.org/abs/2410.08767 |