Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature

Documenti analoghi

• Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide
  di: Hesselmeier, Erik, et al.
  Pubblicazione: (2023)
• High fidelity optical readout of a nuclear spin qubit in Silicon Carbide
  di: Hesselmeier, Erik, et al.
  Pubblicazione: (2024)
• Localization and coherent control of 25 nuclear spins in Silicon Carbide
  di: Kuna, Pierre, et al.
  Pubblicazione: (2025)
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
  di: Heiler, Jonah, et al.
  Pubblicazione: (2023)
• Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers
  di: Misagh Ghezellou, et al.
  Pubblicazione: (2024)