Imagen de Portada

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Nguyen, Thai-Son, Pieczulewsi, Naomi, Savant, Chandrashekhar, Cooper, Joshua J. P., Casamento, Joseph, Goldman, Rachel S., Muller, David A., Xing, Huili G., Jena, Debdeep
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

High Mobility Multiple-Channel AlScN/GaN Heterostructures
por: Asteris, Aias, et al.
Publicado: (2025)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
por: Chen, Yu-Hsin, et al.
Publicado: (2026)

Epitaxial high-K AlBN barrier GaN HEMTs
por: Savant, Chandrashekhar, et al.
Publicado: (2025)

Understanding Interfaces in AlScN/GaN Heterostructures
por: Isabel Streicher, et al.
Publicado: (2024)

Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
por: Casamento, Joseph, et al.
Publicado: (2021)

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
por: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Publicado: (2025)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
por: Chen, Yu-Hsin, et al.
Publicado: (2025)

The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
por: Gremmel, Maike, et al.
Publicado: (2025)

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures
por: Chandrashekhar Savant, et al.
Publicado: (2024)

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes
por: Jimy Encomendero, et al.
Publicado: (2026)

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
por: Cao, Can, et al.
Publicado: (2026)

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
por: Cho, YongJin, et al.
Publicado: (2026)

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition
por: Isabel Streicher, et al.
Publicado: (2025)

A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
por: Asteris, Aias, et al.
Publicado: (2025)

Ferroelectric AlBN Films by Molecular Beam Epitaxy
por: Savant, Chandrashekhar, et al.
Publicado: (2024)

Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems
por: Zhiwei Xie, et al.
Publicado: (2025)

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
por: Dill, Joseph E., et al.
Publicado: (2024)

Quantum oscillations of holes in GaN
por: Chang, Chuan F. C., et al.
Publicado: (2025)

Towards higher electro-optic response in AlScN
por: Wang, Haochen, et al.
Publicado: (2024)

Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
por: Wolff, Niklas, et al.
Publicado: (2025)

Interfacial Polarization Switching in Al 0.92 Sc 0.08 N/GaN Heterostructures Grown by Sputter Epitaxy
por: Niklas Wolff, et al.
Publicado: (2025)

Atomistic Structure of Transient Switching States in Ferroelectric AlScN
por: Huang, Jiawei, et al.
Publicado: (2025)

On the exceptional temperature stability of ferroelectric AlScN thin films
por: Islam, MD Redwanul, et al.
Publicado: (2021)

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
por: Kim, Eungkyun, et al.
Publicado: (2025)

Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
por: Date, Mihir, et al.
Publicado: (2017)

Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis
por: Kumar, Rajendra, et al.
Publicado: (2024)

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles
por: Wang, Ruiqing, et al.
Publicado: (2025)

Record Negative Photoconductivity in N‐Polar AlGaN/GaN Quantum‐Well Heterostructures
por: Maciej Matys, et al.
Publicado: (2025)

Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
por: Song, Seunguk, et al.
Publicado: (2025)

CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator
por: Yoshioka, Valerie, et al.
Publicado: (2024)

High Photostrictive Strain Rate in Ferroelectric AlScN Thin Films
por: Hui Li, et al.
Publicado: (2025)

Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
por: Dill, Joseph E., et al.
Publicado: (2025)

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)
por: Eungkyun Kim, et al.
Publicado: (2026)

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
por: Tetsuya Suemitsu, et al.
Publicado: (2026)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
por: Singhal, Jashan, et al.
Publicado: (2022)

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
por: Ki‐Sik Im, et al.
Publicado: (2024)

Cryogenic enhancement of phononic four-wave mixing in AlScN/SiC
por: Behera, A. K., et al.
Publicado: (2026)

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
por: Kim, Kwan-Ho, et al.
Publicado: (2024)

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
por: Kyung Do Kim, et al.
Publicado: (2025)

CMOS‐compatible, AlScN‐based integrated electro‐optic phase shifter
por: Valerie Yoshioka, et al.
Publicado: (2024)