Hexagonal boron nitride crystal growth in the Li3BN2-BN system
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866912073324167168 |
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| author | Maestre, Camille Steyer, Philippe Toury, Bérangère Journet, Catherine Garnier, Vincent |
| author_facet | Maestre, Camille Steyer, Philippe Toury, Bérangère Journet, Catherine Garnier, Vincent |
| contents | Hexagonal boron nitride (hBN) presents valuable intrinsic properties and attracts considerable attention for the development of novel two-dimensional (2D) materials-based technologies. Even though huge efforts have been made to improve the bottom-up synthesis of integrated and high quality hBN, the devices presenting the best performances are still made using hBN exfoliated from bulk crystals. In this context, we explore the Polymer-Derived Ceramics (PDC) route coupled to a high temperature process that produces millimetric and high quality hBN crystals. By investigating the (micro)structure of several samples, we demonstrate that the crystal growth occurs by segregation from a Li3BN2-BN solution upon cooling and from hBN seeds. In particular, we show that crystallization can occur at a temperature as low as 1400{\textdegree}C. Overall, these results show that hBN crystal growth in the Li3BN2-BN system is compatible with conventional flux methods that may be the most promising platform for continuous seeded hBN crystal growth. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_11334 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hexagonal boron nitride crystal growth in the Li3BN2-BN system Maestre, Camille Steyer, Philippe Toury, Bérangère Journet, Catherine Garnier, Vincent Materials Science Hexagonal boron nitride (hBN) presents valuable intrinsic properties and attracts considerable attention for the development of novel two-dimensional (2D) materials-based technologies. Even though huge efforts have been made to improve the bottom-up synthesis of integrated and high quality hBN, the devices presenting the best performances are still made using hBN exfoliated from bulk crystals. In this context, we explore the Polymer-Derived Ceramics (PDC) route coupled to a high temperature process that produces millimetric and high quality hBN crystals. By investigating the (micro)structure of several samples, we demonstrate that the crystal growth occurs by segregation from a Li3BN2-BN solution upon cooling and from hBN seeds. In particular, we show that crystallization can occur at a temperature as low as 1400{\textdegree}C. Overall, these results show that hBN crystal growth in the Li3BN2-BN system is compatible with conventional flux methods that may be the most promising platform for continuous seeded hBN crystal growth. |
| title | Hexagonal boron nitride crystal growth in the Li3BN2-BN system |
| topic | Materials Science |
| url | https://arxiv.org/abs/2410.11334 |