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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Acceso en línea: | https://arxiv.org/abs/2410.11475 |
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| _version_ | 1866918149016780800 |
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| author | Song, Yu Qiu, Chen Wei, Su-Huai |
| author_facet | Song, Yu Qiu, Chen Wei, Su-Huai |
| contents | The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_γ$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain recent basic experiments. Here, we propose an essentially new ``nonradiative carrier capture-structural relaxation'' (NCCSR) mechanism that can consistently explain the puzzling temperature/electric-field dependence, based on spin-polarized HSE06 hybrid functional calculations and existing experimental alignment of defect formation energies and charge capture cross-sections of large-sample oxygen vacancies in $a$-SiO$_2$. It is revealed that, the long-assumed $V_{Oγ}$ precursors with high formation energy cannot survive in high temperature-grown $a$-SiO$_2$; whereas the stable $V_{Oδ}$ can capture irradiation-induced holes via strong electron-phonon coupling, generating metastable $E'_δ$ that most relax into stable $E'_γ$. A fractional power-law (FPL) dynamic model is derived based on the mechanism and the Kohlrausch-Williams Watts (KWW) decay function. It can uniformly describe nonlinear data over a wide dose and temperature range. This work not only provides a solid cornerstone for prediction and hardening of TID effects of SiO$_2$-based semiconductor devices, but also offers a general approach for studying ionizing radiation physics in alternative dielectrics with intrinsic electronic metastability and dispersion. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_11475 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Mechanism of $E'_γ$ Defect Generation in Ionizing-irradiated $a$-SiO$_2$: The Nonradiative Carrier Capture-Structural Relaxation Model Song, Yu Qiu, Chen Wei, Su-Huai Materials Science Applied Physics The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E'_γ$ defects in the $a$-SiO$_2$ dielectrics, but the conventional ``hole transport-trapping'' model of defect generation fails to explain recent basic experiments. Here, we propose an essentially new ``nonradiative carrier capture-structural relaxation'' (NCCSR) mechanism that can consistently explain the puzzling temperature/electric-field dependence, based on spin-polarized HSE06 hybrid functional calculations and existing experimental alignment of defect formation energies and charge capture cross-sections of large-sample oxygen vacancies in $a$-SiO$_2$. It is revealed that, the long-assumed $V_{Oγ}$ precursors with high formation energy cannot survive in high temperature-grown $a$-SiO$_2$; whereas the stable $V_{Oδ}$ can capture irradiation-induced holes via strong electron-phonon coupling, generating metastable $E'_δ$ that most relax into stable $E'_γ$. A fractional power-law (FPL) dynamic model is derived based on the mechanism and the Kohlrausch-Williams Watts (KWW) decay function. It can uniformly describe nonlinear data over a wide dose and temperature range. This work not only provides a solid cornerstone for prediction and hardening of TID effects of SiO$_2$-based semiconductor devices, but also offers a general approach for studying ionizing radiation physics in alternative dielectrics with intrinsic electronic metastability and dispersion. |
| title | Mechanism of $E'_γ$ Defect Generation in Ionizing-irradiated $a$-SiO$_2$: The Nonradiative Carrier Capture-Structural Relaxation Model |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2410.11475 |