Zero external magnetic field quantum standard of resistance at the 10-9 level
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866910793746874368 |
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| author | Patel, D. K. Fijalkowski, K. M. Kruskopf, M. Liu, N. Götz, M. Pesel, E. Jaime, M. Klement, M. Schreyeck, S. Brunner, K. Gould, C. Molenkamp, L. W. Scherer, H. |
| author_facet | Patel, D. K. Fijalkowski, K. M. Kruskopf, M. Liu, N. Götz, M. Pesel, E. Jaime, M. Klement, M. Schreyeck, S. Brunner, K. Gould, C. Molenkamp, L. W. Scherer, H. |
| contents | The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_13365 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Zero external magnetic field quantum standard of resistance at the 10-9 level Patel, D. K. Fijalkowski, K. M. Kruskopf, M. Liu, N. Götz, M. Pesel, E. Jaime, M. Klement, M. Schreyeck, S. Brunner, K. Gould, C. Molenkamp, L. W. Scherer, H. Mesoscale and Nanoscale Physics Other Condensed Matter The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. |
| title | Zero external magnetic field quantum standard of resistance at the 10-9 level |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2410.13365 |