HfO2-x Neuromorphic Memristor Based on Tantalum and Molybdenum Electrodes
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866911338019684352 |
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| author | Karatas, Kerem Ozkal, Bunyamin Cosar, Abdullah H. Kazan, Sinan |
| author_facet | Karatas, Kerem Ozkal, Bunyamin Cosar, Abdullah H. Kazan, Sinan |
| contents | In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method. Electrodes were fabricated using a sputtering system and photolithography method. The metal oxide stoichiometry was ascertained via X-ray photoelectron spectroscopy (XPS). A pinched hysteresis loop is demonstrated through I-V measurements, confirming SET and RESET states. I-V measurement is supported by conduction mechanism analysis. A clear separation between high- and low-resistance states is shown during repeated reads. The neuromorphic characteristics of the device are confirmed through long-term potentiation/depression and paired-pulse facilitation. These results demonstrate that Ta/HfO2-x/Mo is a promising configuration for resistive switching device research and neuromorphic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_13888 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | HfO2-x Neuromorphic Memristor Based on Tantalum and Molybdenum Electrodes Karatas, Kerem Ozkal, Bunyamin Cosar, Abdullah H. Kazan, Sinan Applied Physics In this research, we report the fabrication and characterization of a Ta/HfO2-x/Mo memristor. The synaptic behavior of a Ta/HfO2-x/Mo memristor has been investigated. HfO2-x (15 nm) was grown using the pulsed laser deposition (PLD) method. Electrodes were fabricated using a sputtering system and photolithography method. The metal oxide stoichiometry was ascertained via X-ray photoelectron spectroscopy (XPS). A pinched hysteresis loop is demonstrated through I-V measurements, confirming SET and RESET states. I-V measurement is supported by conduction mechanism analysis. A clear separation between high- and low-resistance states is shown during repeated reads. The neuromorphic characteristics of the device are confirmed through long-term potentiation/depression and paired-pulse facilitation. These results demonstrate that Ta/HfO2-x/Mo is a promising configuration for resistive switching device research and neuromorphic applications. |
| title | HfO2-x Neuromorphic Memristor Based on Tantalum and Molybdenum Electrodes |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2410.13888 |