Plasma-Metal Junction:A Junction With Negative Turn-On Voltage
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arXiv
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| Natura: | Preprint |
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2024
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| _version_ | 1866913553261264896 |
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| author | Kommuguri, Sneha Latha Pratihary, Smrutishree Singh, Thangjam Rishikanta Sinha, Suraj Kumar |
| author_facet | Kommuguri, Sneha Latha Pratihary, Smrutishree Singh, Thangjam Rishikanta Sinha, Suraj Kumar |
| contents | Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellain in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5V and decreases to 0.24V for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of -7.0V. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new understanding developed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_14306 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Plasma-Metal Junction:A Junction With Negative Turn-On Voltage Kommuguri, Sneha Latha Pratihary, Smrutishree Singh, Thangjam Rishikanta Sinha, Suraj Kumar Plasma Physics Mesoscale and Nanoscale Physics Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellain in nature, while metal electrons obey the Fermi-Dirac distribution. In this experiment, the current-voltage characteristics of solid-state devices that form homo or hetero-junction are compared to the pm-junction. Observation shows that the turn-on voltage for pn-junction is 0.5V and decreases to 0.24V for metal-semiconductor junction. However, the pm-junction's turn-on voltage was lowered to a negative value of -7.0V. The devices with negative turn-on voltage are suitable for high-frequency operations. Further, observations show that the current-voltage characteristics of the pm-junction depend on the metal's work function, and the turn-on voltage remains unchanged. This result validates the applicability of the energy-band model for the pm-junction. We present a perspective metal-oxide-plasma (MOP), a gaseous electronic device, as an alternative to metal-oxide-semiconductor (MOS), based on the new understanding developed. |
| title | Plasma-Metal Junction:A Junction With Negative Turn-On Voltage |
| topic | Plasma Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2410.14306 |