Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions

Fuente: arXiv
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Main Authors: Turini, Bianca, Salimian, Sedighe, Carrega, Matteo, Paolucci, Federico, Zannier, Valentina, Sorba, Lucia, Heun, Stefan
Format: Preprint
Published: 2024
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author Turini, Bianca
Salimian, Sedighe
Carrega, Matteo
Paolucci, Federico
Zannier, Valentina
Sorba, Lucia
Heun, Stefan
author_facet Turini, Bianca
Salimian, Sedighe
Carrega, Matteo
Paolucci, Federico
Zannier, Valentina
Sorba, Lucia
Heun, Stefan
contents InSb nanoflags, due to their intrinsic spin-orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, was reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the planar geometry can be exploited to manipulate both carrier concentration and spin-orbit strength by electrical means. Here we present experimental results on InSb nanoflag-based Josephson junctions fabricated with side-gates placed in close proximity to the junction. We show that side-gates can efficiently modulate the current through the junction, both in the dissipative and in the dissipation-less regimes, similarly to what obtained with a conventional back-gate. Furthermore, the side-gates can be used to influence the Fraunhofer interference pattern induced by the presence of an external out-of-plane magnetic field.
format Preprint
id arxiv_https___arxiv_org_abs_2410_14469
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions
Turini, Bianca
Salimian, Sedighe
Carrega, Matteo
Paolucci, Federico
Zannier, Valentina
Sorba, Lucia
Heun, Stefan
Superconductivity
Mesoscale and Nanoscale Physics
Quantum Physics
InSb nanoflags, due to their intrinsic spin-orbit interactions, are an interesting platform in the study of planar Josephson junctions. Ballistic transport, combined with high transparency of the superconductor/semiconductor interfaces, was reported to lead to interesting phenomena such as the Josephson diode effect. The versatility offered by the planar geometry can be exploited to manipulate both carrier concentration and spin-orbit strength by electrical means. Here we present experimental results on InSb nanoflag-based Josephson junctions fabricated with side-gates placed in close proximity to the junction. We show that side-gates can efficiently modulate the current through the junction, both in the dissipative and in the dissipation-less regimes, similarly to what obtained with a conventional back-gate. Furthermore, the side-gates can be used to influence the Fraunhofer interference pattern induced by the presence of an external out-of-plane magnetic field.
title Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions
topic Superconductivity
Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2410.14469