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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.14478 |
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| _version_ | 1866929692960882688 |
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| author | Sewell, Kevin Murphy-Armando, Felipe |
| author_facet | Sewell, Kevin Murphy-Armando, Felipe |
| contents | We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained GeSn, we find that a Sn concentration of at least $13.5\%$ is needed to achieve an electron mobility greater than that of Ge. Our results show that the mobility of GeSn can be over $25$ times higher than the mobility of Ge, or $10^5$ cm$^2$/(Vs). At $15K$, less than $6\%$ Sn incorporation into Ge quadruples its mobility, which suggests GeSn has potential applications as a high mobility 2D electron gas. Applying biaxial tensile strain to GeSn further increases the mobility and at a lower Sn content than in unstrained GeSn. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_14478 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn Sewell, Kevin Murphy-Armando, Felipe Materials Science We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained GeSn, we find that a Sn concentration of at least $13.5\%$ is needed to achieve an electron mobility greater than that of Ge. Our results show that the mobility of GeSn can be over $25$ times higher than the mobility of Ge, or $10^5$ cm$^2$/(Vs). At $15K$, less than $6\%$ Sn incorporation into Ge quadruples its mobility, which suggests GeSn has potential applications as a high mobility 2D electron gas. Applying biaxial tensile strain to GeSn further increases the mobility and at a lower Sn content than in unstrained GeSn. |
| title | First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn |
| topic | Materials Science |
| url | https://arxiv.org/abs/2410.14478 |