A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations

Fuente: arXiv
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Main Authors: Steinacker, Paul, Stuyck, Nard Dumoulin, Lim, Wee Han, Tanttu, Tuomo, Feng, MengKe, Nickl, Andreas, Serrano, Santiago, Candido, Marco, Cifuentes, Jesus D., Hudson, Fay E., Chan, Kok Wai, Kubicek, Stefan, Jussot, Julien, Canvel, Yann, Beyne, Sofie, Shimura, Yosuke, Loo, Roger, Godfrin, Clement, Raes, Bart, Baudot, Sylvain, Wan, Danny, Laucht, Arne, Yang, Chih Hwan, Saraiva, Andre, Escott, Christopher C., De Greve, Kristiaan, Dzurak, Andrew S.
Format: Preprint
Published: 2024
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author Steinacker, Paul
Stuyck, Nard Dumoulin
Lim, Wee Han
Tanttu, Tuomo
Feng, MengKe
Nickl, Andreas
Serrano, Santiago
Candido, Marco
Cifuentes, Jesus D.
Hudson, Fay E.
Chan, Kok Wai
Kubicek, Stefan
Jussot, Julien
Canvel, Yann
Beyne, Sofie
Shimura, Yosuke
Loo, Roger
Godfrin, Clement
Raes, Bart
Baudot, Sylvain
Wan, Danny
Laucht, Arne
Yang, Chih Hwan
Saraiva, Andre
Escott, Christopher C.
De Greve, Kristiaan
Dzurak, Andrew S.
author_facet Steinacker, Paul
Stuyck, Nard Dumoulin
Lim, Wee Han
Tanttu, Tuomo
Feng, MengKe
Nickl, Andreas
Serrano, Santiago
Candido, Marco
Cifuentes, Jesus D.
Hudson, Fay E.
Chan, Kok Wai
Kubicek, Stefan
Jussot, Julien
Canvel, Yann
Beyne, Sofie
Shimura, Yosuke
Loo, Roger
Godfrin, Clement
Raes, Bart
Baudot, Sylvain
Wan, Danny
Laucht, Arne
Yang, Chih Hwan
Saraiva, Andre
Escott, Christopher C.
De Greve, Kristiaan
Dzurak, Andrew S.
contents Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $μ$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $μ$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.
format Preprint
id arxiv_https___arxiv_org_abs_2410_15590
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
Steinacker, Paul
Stuyck, Nard Dumoulin
Lim, Wee Han
Tanttu, Tuomo
Feng, MengKe
Nickl, Andreas
Serrano, Santiago
Candido, Marco
Cifuentes, Jesus D.
Hudson, Fay E.
Chan, Kok Wai
Kubicek, Stefan
Jussot, Julien
Canvel, Yann
Beyne, Sofie
Shimura, Yosuke
Loo, Roger
Godfrin, Clement
Raes, Bart
Baudot, Sylvain
Wan, Danny
Laucht, Arne
Yang, Chih Hwan
Saraiva, Andre
Escott, Christopher C.
De Greve, Kristiaan
Dzurak, Andrew S.
Mesoscale and Nanoscale Physics
Quantum Physics
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits on a single chip. Here, we show precise qubit operation of a silicon two-qubit device made in a 300 mm semiconductor processing line. The key metrics including single- and two-qubit control fidelities exceed 99% and state preparation and measurement fidelity exceeds 99.9%, as evidenced by gate set tomography (GST). We report coherence and lifetimes up to $T_\mathrm{2}^{\mathrm{*}} = 30.4$ $μ$s, $T_\mathrm{2}^{\mathrm{Hahn}} = 803$ $μ$s, and $T_1 = 6.3$ s. Crucially, the dominant operational errors originate from residual nuclear spin carrying isotopes, solvable with further isotopic purification, rather than charge noise arising from the dielectric environment. Our results answer the longstanding question whether the favourable properties including high-fidelity operation and long coherence times can be preserved when transitioning from a tailored academic to an industrial semiconductor fabrication technology.
title A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2410.15590