3 kV Monolithic Bidirectional GaN HEMT on Sapphire
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914982230228992 |
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| author | Alam, Md Tahmidul Mukhopadhyay, Swarnav Haque, Md Mobinul Pasayat, Shubhra S. Gupta, Chirag |
| author_facet | Alam, Md Tahmidul Mukhopadhyay, Swarnav Haque, Md Mobinul Pasayat, Shubhra S. Gupta, Chirag |
| contents | More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20 ohm.mm or ~11 mili ohm.cm^2. Breakdown voltage was optimized by utilizing two field plates in either side of the transistor and optimizing their geometry. Shorter first field plate lengths (less than 2 micron) resulted in higher breakdown voltage and the possible reason for this was discussed. The transistors had a steep subthreshold swing of 92 mV / dec. The on/off ratio was greater than 10^5 and it was limited by the tool capacity. The fabricated 3 kV transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage and on resistance, that showed crucial progress. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_16218 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | 3 kV Monolithic Bidirectional GaN HEMT on Sapphire Alam, Md Tahmidul Mukhopadhyay, Swarnav Haque, Md Mobinul Pasayat, Shubhra S. Gupta, Chirag Applied Physics More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20 ohm.mm or ~11 mili ohm.cm^2. Breakdown voltage was optimized by utilizing two field plates in either side of the transistor and optimizing their geometry. Shorter first field plate lengths (less than 2 micron) resulted in higher breakdown voltage and the possible reason for this was discussed. The transistors had a steep subthreshold swing of 92 mV / dec. The on/off ratio was greater than 10^5 and it was limited by the tool capacity. The fabricated 3 kV transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage and on resistance, that showed crucial progress. |
| title | 3 kV Monolithic Bidirectional GaN HEMT on Sapphire |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2410.16218 |