3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Fuente:
arXiv
Saved in:
| Main Authors: | Alam, Md Tahmidul, Mukhopadhyay, Swarnav, Haque, Md Mobinul, Pasayat, Shubhra S., Gupta, Chirag |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2023)
by: Alam, Md Tahmidul, et al.
Published: (2023)
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2024)
by: Alam, Md Tahmidul, et al.
Published: (2024)
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
by: Mukhopadhyay, Swarnav, et al.
Published: (2024)
by: Mukhopadhyay, Swarnav, et al.
Published: (2024)
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
by: Bai, Ruixin, et al.
Published: (2025)
by: Bai, Ruixin, et al.
Published: (2025)
Electrical Characterization of High-k (k>115) Crystalline SrTiO3 (STO) thin film integration with GaN with Nanomembrane Transfer Process
by: Alam, Md Tahmidul, et al.
Published: (2025)
by: Alam, Md Tahmidul, et al.
Published: (2025)
Kilo‐Volt Class Al 0.65 Ga 0.35 N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm 2 Baliga Figure of Merit on Sapphire Substrate
by: Khush Gohel, et al.
Published: (2026)
by: Khush Gohel, et al.
Published: (2026)
Simplified EPFL GaN HEMT Model
by: Jazaeri, Farzan, et al.
Published: (2024)
by: Jazaeri, Farzan, et al.
Published: (2024)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
by: Liu, Yizheng, et al.
Published: (2025)
by: Liu, Yizheng, et al.
Published: (2025)
High-Performance Self-Powered Photoelectrochemical Detection Using Scalable InGaN/GaN Nanowire Arrays
by: Kumawat, Kishan Lal, et al.
Published: (2025)
by: Kumawat, Kishan Lal, et al.
Published: (2025)
Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
by: Raychaudhuri, Jagori, et al.
Published: (2023)
by: Raychaudhuri, Jagori, et al.
Published: (2023)
High Breakdown Field Multi-kV UWBG AlGaN Transistors
by: Shin, Seungheon, et al.
Published: (2026)
by: Shin, Seungheon, et al.
Published: (2026)
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
by: Mi, Junlin, et al.
Published: (2025)
by: Mi, Junlin, et al.
Published: (2025)
Monolithic beta-Ga2O3 Bidirectional MOSFET
by: Sharma, Pooja, et al.
Published: (2024)
by: Sharma, Pooja, et al.
Published: (2024)
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)
by: Rahman, Sheikh Ifatur, et al.
Published: (2024)
Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT
by: Liao, Hang, et al.
Published: (2024)
by: Liao, Hang, et al.
Published: (2024)
Demonstration of TFTs 3D Monolithically Integrated on GaN HEMTs using Cascode Configuration with High Breakdown Voltage (>1900V)
by: Wu, Tian-Li, et al.
Published: (2025)
by: Wu, Tian-Li, et al.
Published: (2025)
On Apparent Absence of Green Gap in InGaN/GaN Quantum Disks and Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
by: Sadaf, Sharif Md., et al.
Published: (2025)
by: Sadaf, Sharif Md., et al.
Published: (2025)
InGaN Nanopixel Arrays on Single Crystal GaN Substrate
by: Anand, Nirmal, et al.
Published: (2025)
by: Anand, Nirmal, et al.
Published: (2025)
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
by: Tijent, Fatima Z., et al.
Published: (2024)
by: Tijent, Fatima Z., et al.
Published: (2024)
Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
by: Date, Mihir, et al.
Published: (2017)
by: Date, Mihir, et al.
Published: (2017)
>3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
by: Gilankar, Advait, et al.
Published: (2024)
by: Gilankar, Advait, et al.
Published: (2024)
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024)
by: Frank Brunner, et al.
Published: (2024)
Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires
by: Bhunia, Swagata, et al.
Published: (2024)
by: Bhunia, Swagata, et al.
Published: (2024)
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
by: Orfao, B., et al.
Published: (2026)
by: Orfao, B., et al.
Published: (2026)
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
by: Cao, Can, et al.
Published: (2026)
by: Cao, Can, et al.
Published: (2026)
Effect of current on terahertz plasmons in AlGaN/GaN heterostructures
by: Dub, M., et al.
Published: (2025)
by: Dub, M., et al.
Published: (2025)
Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy
by: Verma, Darpan, et al.
Published: (2020)
by: Verma, Darpan, et al.
Published: (2020)
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
by: Liu, Yizheng, et al.
Published: (2024)
by: Liu, Yizheng, et al.
Published: (2024)
MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
by: Saha, Chinmoy Nath, et al.
Published: (2025)
by: Saha, Chinmoy Nath, et al.
Published: (2025)
Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
by: Xia, Zhanbo, et al.
Published: (2024)
by: Xia, Zhanbo, et al.
Published: (2024)
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
by: Wolff, Niklas, et al.
Published: (2025)
by: Wolff, Niklas, et al.
Published: (2025)
Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)
by: Chang, Chuan F. C., et al.
Published: (2025)
Frequency-Resolved Forward Capacitance in GaN-based LEDs
by: Li, Yuchen, et al.
Published: (2024)
by: Li, Yuchen, et al.
Published: (2024)
Polarity-induced selective area epitaxy of GaN nanowires
by: Schiaber, Ziani de Souza, et al.
Published: (2024)
by: Schiaber, Ziani de Souza, et al.
Published: (2024)
Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs
by: Shen, Yang, et al.
Published: (2023)
by: Shen, Yang, et al.
Published: (2023)
Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition
by: Wang, Guangying, et al.
Published: (2025)
by: Wang, Guangying, et al.
Published: (2025)
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)
by: Chen, Yu-Hsin, et al.
Published: (2026)
Frequency multiplication in Terahertz band using AlGaN/GaN plasmonic crystals
by: Shur, Michael, et al.
Published: (2025)
by: Shur, Michael, et al.
Published: (2025)
Similar Items
-
Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2023) -
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023) -
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2024) -
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
by: Mukhopadhyay, Swarnav, et al.
Published: (2024) -
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
by: Bai, Ruixin, et al.
Published: (2025)