Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling
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arXiv
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| Auteurs principaux: | , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866910660676288512 |
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| author | Lafforgue, Christian Zabelich, Boris Brès, Camille-Sophie |
| author_facet | Lafforgue, Christian Zabelich, Boris Brès, Camille-Sophie |
| contents | Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent advancements revealed that the displacement of thermally excited charge carriers under a high electric field induces a second-order nonlinearity in silicon nitride, thus enabling the linear EO effect in this platform regardless of the material's inversion symmetry. In this work, we show for the first time optically-assisted poling of a silicon nitride microring resonator, removing the need for high-temperature processing of the device. The optical stimulation of charges avoids the technical constraints due to elevated temperature. By optimizing the poling process, we experimentally obtain a long-term effective second-order nonlinearity of 1.2 pm/V. Additionally, we measure the high-speed EO response of the modulator, showing a bandwidth of 4 GHz, only limited by the quality factor of the microring resonator. This work goes towards the implementation of monolithic, compact silicon nitride EO modulators, a necessary component for high-density integrated optical signal processing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_16936 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling Lafforgue, Christian Zabelich, Boris Brès, Camille-Sophie Optics Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent advancements revealed that the displacement of thermally excited charge carriers under a high electric field induces a second-order nonlinearity in silicon nitride, thus enabling the linear EO effect in this platform regardless of the material's inversion symmetry. In this work, we show for the first time optically-assisted poling of a silicon nitride microring resonator, removing the need for high-temperature processing of the device. The optical stimulation of charges avoids the technical constraints due to elevated temperature. By optimizing the poling process, we experimentally obtain a long-term effective second-order nonlinearity of 1.2 pm/V. Additionally, we measure the high-speed EO response of the modulator, showing a bandwidth of 4 GHz, only limited by the quality factor of the microring resonator. This work goes towards the implementation of monolithic, compact silicon nitride EO modulators, a necessary component for high-density integrated optical signal processing. |
| title | Monolithic silicon nitride electro-optic modulator enabled by optically-assisted poling |
| topic | Optics |
| url | https://arxiv.org/abs/2410.16936 |