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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2410.17037 |
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| _version_ | 1866912278976135168 |
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| author | Gaddam, Venkateswarlu Dabas, Shaurya S. Gao, Jinghan Spry, David J. Baucom, Garrett Rudawski, Nicholas G. Yin, Tete Angerhofer, Ethan Neudeck, Philip G. Kim, Honggyu Feng, Philip X. -L. Sheplak, Mark Tabrizian, Roozbeh |
| author_facet | Gaddam, Venkateswarlu Dabas, Shaurya S. Gao, Jinghan Spry, David J. Baucom, Garrett Rudawski, Nicholas G. Yin, Tete Angerhofer, Ethan Neudeck, Philip G. Kim, Honggyu Feng, Philip X. -L. Sheplak, Mark Tabrizian, Roozbeh |
| contents | Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000°C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V at 800°C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient was calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700°C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_17037 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Aluminum Scandium Nitride as a Functional Material at 1000°C Gaddam, Venkateswarlu Dabas, Shaurya S. Gao, Jinghan Spry, David J. Baucom, Garrett Rudawski, Nicholas G. Yin, Tete Angerhofer, Ethan Neudeck, Philip G. Kim, Honggyu Feng, Philip X. -L. Sheplak, Mark Tabrizian, Roozbeh Materials Science Mesoscale and Nanoscale Physics Applied Physics Aluminum scandium nitride (AlScN) has emerged as a highly promising material for high-temperature applications due to its robust piezoelectric, ferroelectric, and dielectric properties. This study investigates the behavior of Al0.7Sc0.3N thin films in extreme thermal environments, demonstrating functional stability up to 1000°C, making it suitable for use in aerospace, hypersonics, deep-well, and nuclear reactor systems. Tantalum silicide (TaSi2)/Al0.7Sc0.3N/TaSi2 capacitors were fabricated and characterized across a wide temperature range, revealing robust ferroelectric and dielectric properties, along with significant enhancement in piezoelectric performance. At 1000°C, the ferroelectric hysteresis loops showed a substantial reduction in coercive field from 4.3 MV/cm to 1.2 MV/cm, while the longitudinal piezoelectric coefficient increased nearly tenfold, reaching 75.1 pm/V at 800°C. Structural analysis via scanning and transmission electron microscopy confirmed the integrity of the TaSi2/Al0.7Sc0.3N interfaces, even after exposure to extreme temperatures. Furthermore, the electromechanical coupling coefficient was calculated to increase by over 500%, from 12.9% at room temperature to 82% at 700°C. These findings establish AlScN as a versatile material for high-temperature ferroelectric, piezoelectric, and dielectric applications, offering unprecedented thermal stability and functional enhancement. |
| title | Aluminum Scandium Nitride as a Functional Material at 1000°C |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2410.17037 |