Telecom-wavelength Single-photon Emitters in Multi-layer InSe

Fuente: arXiv
Salvato in:
Dettagli Bibliografici
Autori principali: Zhao, Huan, Hus, Saban, Chen, Jinli, Yan, Xiaodong, Lawrie, Ben, Jesse, Stephen, Li, An-Ping, Liang, Liangbo, Htoon, Han
Natura: Preprint
Pubblicazione: 2024
Soggetti:
Accesso online:
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866929554522636288
author Zhao, Huan
Hus, Saban
Chen, Jinli
Yan, Xiaodong
Lawrie, Ben
Jesse, Stephen
Li, An-Ping
Liang, Liangbo
Htoon, Han
author_facet Zhao, Huan
Hus, Saban
Chen, Jinli
Yan, Xiaodong
Lawrie, Ben
Jesse, Stephen
Li, An-Ping
Liang, Liangbo
Htoon, Han
contents The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000 to 1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs. Our findings highlight the potential of multilayer 2D metal monochalcogenides for creating SPEs across a broad spectral range, paving the way for their integration into quantum communication technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2410_17354
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Telecom-wavelength Single-photon Emitters in Multi-layer InSe
Zhao, Huan
Hus, Saban
Chen, Jinli
Yan, Xiaodong
Lawrie, Ben
Jesse, Stephen
Li, An-Ping
Liang, Liangbo
Htoon, Han
Optics
Mesoscale and Nanoscale Physics
Materials Science
The development of robust and efficient single photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000 to 1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. Density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs. Our findings highlight the potential of multilayer 2D metal monochalcogenides for creating SPEs across a broad spectral range, paving the way for their integration into quantum communication technologies.
title Telecom-wavelength Single-photon Emitters in Multi-layer InSe
topic Optics
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2410.17354