Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| author | Strand, Frode S. Cooil, Simon P. Campbell, Quinn T. Flounders, John J. Røst, Håkon I. Åsland, Anna Cecilie Skarpeid, Alv Johan Stalsberg, Marte P. Hu, Jinbang Bakkelund, Johannes Bjelland, Victoria Preobrajenski, Alexei B. Li, Zheshen Bianchi, Marco Miwa, Jill A. Wells, Justin W. |
| author_facet | Strand, Frode S. Cooil, Simon P. Campbell, Quinn T. Flounders, John J. Røst, Håkon I. Åsland, Anna Cecilie Skarpeid, Alv Johan Stalsberg, Marte P. Hu, Jinbang Bakkelund, Johannes Bjelland, Victoria Preobrajenski, Alexei B. Li, Zheshen Bianchi, Marco Miwa, Jill A. Wells, Justin W. |
| contents | We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_17387 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers Strand, Frode S. Cooil, Simon P. Campbell, Quinn T. Flounders, John J. Røst, Håkon I. Åsland, Anna Cecilie Skarpeid, Alv Johan Stalsberg, Marte P. Hu, Jinbang Bakkelund, Johannes Bjelland, Victoria Preobrajenski, Alexei B. Li, Zheshen Bianchi, Marco Miwa, Jill A. Wells, Justin W. Materials Science We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications. |
| title | Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2410.17387 |