Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909360285810688 |
|---|---|
| author | Pomar, Thierry Désiré Steegemans, Tristan Kumar, Sreejith Bjørk, Rasmus Lei, Zijin Cheah, Erik Schott, Rüdiger Bøggild, Peter Pryds, Nini Wegscheider, Werner Christensen, Dennis Valbjørn |
| author_facet | Pomar, Thierry Désiré Steegemans, Tristan Kumar, Sreejith Bjørk, Rasmus Lei, Zijin Cheah, Erik Schott, Rüdiger Bøggild, Peter Pryds, Nini Wegscheider, Werner Christensen, Dennis Valbjørn |
| contents | Magnetometers based on the extraordinary magnetoresistance (EMR) effect are promising for applications which demand high sensitivity combined with room temperature operation but their application for magnetic field sensing requires further optimization. A key challenge is to obtain Ohmic metal/semiconductor contacts with low contact resistances in EMR devices comprising semiconductors with low carrier densities and high electron mobilities, yet, this topic remains scarcely investigated experimentally. By annealing high-mobility InSb in argon with systematically increasing temperatures, we experimentally demonstrate how the contact resistance to InSb films can be improved by two orders of magnitude by annealing to the micro-Ohm cm2 range without degrading the high mobility. We further show that lowering the contact resistance monotonously increases the room temperature magnetoresistance at 2 T from 700% to 65,000%. Lastly, we explore the origin of intrinsic magnetoresistance in high-mobility InSb thin films and suggest that it can best be explained by multiple band conduction. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_17713 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors Pomar, Thierry Désiré Steegemans, Tristan Kumar, Sreejith Bjørk, Rasmus Lei, Zijin Cheah, Erik Schott, Rüdiger Bøggild, Peter Pryds, Nini Wegscheider, Werner Christensen, Dennis Valbjørn Applied Physics Magnetometers based on the extraordinary magnetoresistance (EMR) effect are promising for applications which demand high sensitivity combined with room temperature operation but their application for magnetic field sensing requires further optimization. A key challenge is to obtain Ohmic metal/semiconductor contacts with low contact resistances in EMR devices comprising semiconductors with low carrier densities and high electron mobilities, yet, this topic remains scarcely investigated experimentally. By annealing high-mobility InSb in argon with systematically increasing temperatures, we experimentally demonstrate how the contact resistance to InSb films can be improved by two orders of magnitude by annealing to the micro-Ohm cm2 range without degrading the high mobility. We further show that lowering the contact resistance monotonously increases the room temperature magnetoresistance at 2 T from 700% to 65,000%. Lastly, we explore the origin of intrinsic magnetoresistance in high-mobility InSb thin films and suggest that it can best be explained by multiple band conduction. |
| title | Improving Electrical Contact Quality and Extraordinary Magnetoresistance in High Mobility III-V Semiconductors |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2410.17713 |