Role of native point defects and Hg impurities in the electronic properties of Bi$_4$I$_4$

Documents similaires

• Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$
  par: Hinostroza, C. David, et autres
  Publié: (2024)
• Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe$_{3-x}$GeTe$_2$
  par: Vaidya, Shroya, et autres
  Publié: (2023)
• Formation of spin and charge ordering in the extended Hubbard model during a finite-time quantum quench
  par: Carvalho, Isaac M., et autres
  Publié: (2022)
• Electronic and magnetic properties of (NdNiO$_3$)/(La$_{2/3}$Sr$_{1/3}$MnO$_3$) superlattices: a DFT+U perspective
  par: Cardoso, Henrique M. M., et autres
  Publié: (2024)
• First-principles characterization of native defects and oxygen impurities in GaAs
  par: Hoang, Khang
  Publié: (2025)