The electronic structure of EuPd$_2$Si$_2$ in the vicinity of the critical endpoint
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912084398178304 |
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| author | Fedchenko, O. Song, Y. -J. Tkach, O. Lytvynenko, Y. Chernov, S. V. Gloskovskii, A. Schlueter, C. Peters, M. Kliemt, K. Krellner, C. Valenti, R. Schoenhense, G. Elmers, H. J. |
| author_facet | Fedchenko, O. Song, Y. -J. Tkach, O. Lytvynenko, Y. Chernov, S. V. Gloskovskii, A. Schlueter, C. Peters, M. Kliemt, K. Krellner, C. Valenti, R. Schoenhense, G. Elmers, H. J. |
| contents | Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, results in a decrease in $T_V$ and the emergence of an antiferromagnetic state at low temperatures without valence fluctuations. It has been proposed that the boundary between AFM order and valence crossover represents a first-order phase transition associated with a specific type of second-order critical end point. In this scenario, strong coupling effects between fluctuating charge, spin, and lattice degrees of freedom are to be expected. In the case of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with x=0.13, which is situated close to the critical end point, a splitting of conduction band states and the emergence of flat bands with one-dimensional character have been observed. A comparison with ab initio theory demonstrates a high degree of correlation with experimental findings, particularly in regard to the bands situated in proximity to the critical end point. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2410_18597 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | The electronic structure of EuPd$_2$Si$_2$ in the vicinity of the critical endpoint Fedchenko, O. Song, Y. -J. Tkach, O. Lytvynenko, Y. Chernov, S. V. Gloskovskii, A. Schlueter, C. Peters, M. Kliemt, K. Krellner, C. Valenti, R. Schoenhense, G. Elmers, H. J. Strongly Correlated Electrons Materials Science Hard X-ray angle-resolved photoemission spectroscopy reveals significant alterations in the valence band states of EuPd$_2$Si$_2$ at a temperature $T_V$, where the Eu ions undergo a temperature-induced valence crossover from a magnetic Eu$^{2+}$ state to a low-temperature valence-fluctuating state. The introduction of small amounts of Au on Pd lattice sites and Ge on Si sites, respectively, results in a decrease in $T_V$ and the emergence of an antiferromagnetic state at low temperatures without valence fluctuations. It has been proposed that the boundary between AFM order and valence crossover represents a first-order phase transition associated with a specific type of second-order critical end point. In this scenario, strong coupling effects between fluctuating charge, spin, and lattice degrees of freedom are to be expected. In the case of EuPd$_2$(Si$_{1-x}$Ge$_x$)$_2$ with x=0.13, which is situated close to the critical end point, a splitting of conduction band states and the emergence of flat bands with one-dimensional character have been observed. A comparison with ab initio theory demonstrates a high degree of correlation with experimental findings, particularly in regard to the bands situated in proximity to the critical end point. |
| title | The electronic structure of EuPd$_2$Si$_2$ in the vicinity of the critical endpoint |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2410.18597 |