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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2410.18758 |
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| _version_ | 1866913752818909184 |
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| author | Sharma, Chithra H. Parvangada, Appanna Tiemann, Lars Rossnagel, Kai Martin, Jens Blick, Robert H. |
| author_facet | Sharma, Chithra H. Parvangada, Appanna Tiemann, Lars Rossnagel, Kai Martin, Jens Blick, Robert H. |
| contents | MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2410_18758 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices Sharma, Chithra H. Parvangada, Appanna Tiemann, Lars Rossnagel, Kai Martin, Jens Blick, Robert H. Mesoscale and Nanoscale Physics Materials Science MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements. |
| title | Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2410.18758 |