Tunable topological edge states in black phosphorus-like Bi(110)

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Liu, Chen, Tao, Shengdan, Wang, Guanyong, Chen, Hongyuan, Xia, Bing, Yang, Hao, Liu, Xiaoxue, Liu, Liang, Li, Yaoyi, Wang, Shiyong, Zheng, Hao, Liu, Canhua, Guan, Dandan, Lu, Yunhao, Jia, Jin-feng
Format: Preprint
Published: 2024
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914988740837376
author Liu, Chen
Tao, Shengdan
Wang, Guanyong
Chen, Hongyuan
Xia, Bing
Yang, Hao
Liu, Xiaoxue
Liu, Liang
Li, Yaoyi
Wang, Shiyong
Zheng, Hao
Liu, Canhua
Guan, Dandan
Lu, Yunhao
Jia, Jin-feng
author_facet Liu, Chen
Tao, Shengdan
Wang, Guanyong
Chen, Hongyuan
Xia, Bing
Yang, Hao
Liu, Xiaoxue
Liu, Liang
Li, Yaoyi
Wang, Shiyong
Zheng, Hao
Liu, Canhua
Guan, Dandan
Lu, Yunhao
Jia, Jin-feng
contents We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 Å, 0.10 Å, 0.05 Å, and 0.00 Å for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.
format Preprint
id arxiv_https___arxiv_org_abs_2410_19369
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Tunable topological edge states in black phosphorus-like Bi(110)
Liu, Chen
Tao, Shengdan
Wang, Guanyong
Chen, Hongyuan
Xia, Bing
Yang, Hao
Liu, Xiaoxue
Liu, Liang
Li, Yaoyi
Wang, Shiyong
Zheng, Hao
Liu, Canhua
Guan, Dandan
Lu, Yunhao
Jia, Jin-feng
Materials Science
Mesoscale and Nanoscale Physics
We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 Å, 0.10 Å, 0.05 Å, and 0.00 Å for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.
title Tunable topological edge states in black phosphorus-like Bi(110)
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2410.19369