Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained

Documenti analoghi

• Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
  di: Licciardi, Marica, et al.
  Pubblicazione: (2026)
• Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition
  di: Wang, Guangying, et al.
  Pubblicazione: (2025)
• MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
  di: Bhuiyan, A F M Anhar Uddin, et al.
  Pubblicazione: (2022)
• Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations
  di: Tsamo, Guy, et al.
  Pubblicazione: (2024)
• Orientation disparity in GaN/graphene/$m$-sapphire: control-based re-examination of thru-hole epitaxy
  di: An, Su Young, et al.
  Pubblicazione: (2023)